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Hanjin Lim
Hanjin Lim
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Title
Cited by
Cited by
Year
Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities
K Park, J Insang, LIM HanJin, Y Lee, J Lee
US Patent 8,698,221, 2014
3092014
Storage electrode of a semiconductor memory device
YS Yu, SS Kim, KH Hwang, HJ Lim, SJ Choi
US Patent 6,809,363, 2004
712004
Conduction barrier offset engineering for DRAM capacitor scaling
M Pešić, S Knebel, K Cho, C Jung, J Chang, H Lim, N Kolomiiets, ...
Solid-State Electronics 115, 133-139, 2016
452016
5.6 A 1/2.65 in 44Mpixel CMOS image sensor with 0.7 µm pixels fabricated in advanced full-depth deep-trench isolation technology
HC Kim, J Park, I Joe, D Kwon, JH Kim, D Cho, T Lee, C Lee, H Park, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 104-106, 2020
412020
Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
M Pešić, S Knebel, M Geyer, S Schmelzer, U Böttger, N Kolomiiets, ...
Journal of Applied Physics 119 (6), 2016
412016
METHOD OF FORMING A SEMICONDUCTOR DEVICE
H Lim, S Nam, J Chung, K Yoon, J Seo, J Lee, S Bae, Lim, Hanjin
US Patent 20,100,112,777, 2010
37*2010
Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices
KH Lee, C Yoo, H Lim, JI Lee, SJ Chung
US Patent App. 10/801,208, 2004
372004
Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices
KH Lee, C Yoo, H Lim, JI Lee, SJ Chung
US Patent App. 10/801,208, 2004
372004
Growth and characterization of Pb (Mg1/3Nb2/3) O3 and Pb (Mg1/3Nb2/3) O3–PbTiO3 thin films using solid source MOCVD techniques
SY Lee, MCC Custodio, HJ Lim, RS Feigelson, JP Maria, ...
Journal of crystal growth 226 (2-3), 247-253, 2001
372001
5.5 A 2.1e Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using …
J Lee, SS Kim, IG Baek, H Shim, T Kim, T Kim, J Kyoung, D Im, J Choi, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 102-104, 2020
322020
Methods of fabricating semiconductor devices using nanowires
H Park, DH Im, SG Lee, JM Lee, H Lim
US Patent 9,543,196, 2017
282017
Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors
KH Lee, JY Kim, SJ Chung, KH Cho, H Lim, JI Lee, K Kim, J Lim
US Patent 7,271,055, 2007
282007
Semiconductor devices including diffusion barriers with high electronegativity metals
H Lim, YS Kim, H Park, SG Lee, CHO Eun-Ae, CM Cho, S Kim, SW Nam
US Patent 9,455,259, 2016
252016
Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors
S Ahn, Y Kim, S Kang, K Im, H Lim
Journal of Vacuum Science & Technology A 35 (1), 2017
212017
Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors
SY Lee, J Chang, Y Kim, HJ Lim, H Jeon, H Seo
Applied Physics Letters 105 (20), 2014
212014
Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond
K Cho, J Lee, JS Lim, H Lim, J Lee, S Park, CY Yoo, ST Kim, UI Chung, ...
Microelectronic engineering 80, 317-320, 2005
212005
Oxidation behavior of nanocrystalline Al alloys containing 5 and 10 at.% Ti
JS Myung, HJ Lim, SG Kang
Oxidation of metals 51 (1), 79-95, 1999
211999
Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile …
H Lim, J Lee, KH Cho, JI Lee, SH Park
US Patent App. 11/480,547, 2007
202007
Epitaxial integration and properties of SrRuO3 on silicon
Z Wang, HP Nair, GC Correa, J Jeong, K Lee, ES Kim, CS Lee, HJ Lim, ...
APL Materials 6 (8), 2018
192018
Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties
CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ...
Advanced Electronic Materials 4 (6), 1700624, 2018
192018
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