| Blue luminescence of a ZnSe‐ZnS0.1Se0.9 strained‐layer superlattice on a GaAs substrate grown by low‐pressure organometallic vapor phase epitaxy S Fujita, Y Matsuda, A Sasaki Applied physics letters 47 (9), 955-957, 1985 | 64 | 1985 |
| Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1− x (0⪕ x⪕ 1) by low-pressure MOVPE S Fujita, Y Matsuda, A Sasaki Journal of Crystal Growth 68 (1), 231-236, 1984 | 58 | 1984 |
| Growth and properties of undoped n-type ZnSe by low-temperature and low-pressure OMVPE S Fujita, Y Matsuda, A Sasaki Japanese journal of applied physics 23 (6A), L360, 1984 | 51 | 1984 |
| Process for crystal growth of III-V group compound semiconductor Y Matsuda, M Hata, N Fukuhara, T Ishihara US Patent 5,603,764, 1997 | 43 | 1997 |
| Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe S Fujita, T Yodo, Y Matsuda, A Sasaki Journal of crystal growth 71 (1), 169-172, 1985 | 28 | 1985 |
| Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposition S Fujita, Y Matsuda, A Sasaki US Patent 4,632,711, 1986 | 17 | 1986 |
| Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities Y Matsuda, M Funato, Y Kawakami Applied Physics Express 10 (7), 071003, 2017 | 15 | 2017 |
| Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates T Fukui, T Sakaguchi, Y Matsuda, M Matsukura, T Kojima, M Funato, ... Japanese Journal of Applied Physics 61 (9), 090904, 2022 | 14 | 2022 |
| Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (1¯ 1¯ 22¯) semipolar planes Y Matsuda, M Funato, Y Kawakami Journal of Applied Physics 128 (21), 2020 | 12 | 2020 |
| Sulfonated product of butadiene or isoprene oligomer and the production therefor Y Matsuda, Y Suzuki, S Yasui US Patent 4,115,437, 1978 | 10 | 1978 |
| Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures Y Matsuda, S Funato, M Funato, Y Kawakami Applied Physics Express 15 (10), 105503, 2022 | 8 | 2022 |
| InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters Y Matsuda, M Funato, Y Kawakami Applied Physics Express 16 (1), 015511, 2023 | 5 | 2023 |
| Growth mechanism of Polar-Plane-Free Faceted InGaN quantum wells Y Matsuda, M Funato, Y Kawakami IEICE Transactions on Electronics 101 (7), 532-536, 2018 | 4 | 2018 |
| Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra Y Matsuda, R Umemoto, M Funato, Y Kawakami Scientific Reports 13 (1), 12665, 2023 | 3 | 2023 |
| Optical anisotropy of (112¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates M Funato, Y Matsuda, K Mori-Tamamura, AA Yamaguchi, H Goto, ... Journal of Applied Physics 131 (7), 2022 | 3 | 2022 |
| Growth evolution of polar-plane-free faceted GaN structures on (112¯ 2) and (1¯ 1¯ 22¯) GaN substrates Y Matsuda, M Funato, Y Kawakami Journal of Applied Physics 129 (16), 2021 | 3 | 2021 |
| Process for preparation of resin composition useful for laminated sheet S Yasui, Y Matsuda, M Sagou, T Noguchi US Patent 4,259,395, 1981 | 3 | 1981 |
| Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures Y Matsuda, A Sakaki, M Funato, Y Kawakami Applied Physics Letters 123 (24), 2023 | 2 | 2023 |
| Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates T Fukui, Y Matsuda, M Matsukura, T Kojima, M Funato, Y Kawakami Crystal Growth & Design 23 (4), 2739-2744, 2023 | 2 | 2023 |
| The epitaxial growth of gallium arsenide using triethylarsine T Maeda, M Hata, Y Zempo, N Fukuhara, Y Matsuda, K Sawara Applied organometallic chemistry 3 (2), 151-156, 1989 | 2 | 1989 |
