| High-performance GeSn photodetector covering all telecommunication bands N Wang, C Xue, F Wan, Y Zhao, G Xu, Z Liu, J Zheng, Y Zuo, B Cheng, ... IEEE Photonics Journal 13 (2), 1-9, 2021 | 20 | 2021 |
| Spontaneously conversion from film to high crystalline quality stripe during molecular beam epitaxy for high Sn content GeSn N Wang, C Xue, F Wan, Y Zhao, G Xu, Z Liu, J Zheng, Y Zuo, B Cheng, ... Scientific Reports 10 (1), 6161, 2020 | 16 | 2020 |
| Study of strain evolution mechanism in Ge1− xSnx materials grown by low temperature molecular beam epitaxy F Wan, C Xu, X Wang, G Xu, B Cheng, C Xue Journal of Crystal Growth 577, 126399, 2022 | 12 | 2022 |
| Si-Based Ge 320✕ 256 Focal Plane Array for Short-Wave Infrared Imaging G Xu, H Cong, F Wan, X Wang, C Xie, C Xu, C Xue IEEE Photonics Technology Letters 34 (10), 517-520, 2022 | 3 | 2022 |
| Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding R Ji, L Yao, J Jiao, G Xu, F Fu, G Lin, C Li, W Huang, C Xue, S Chen IEEE Electron Device Letters, 2024 | | 2024 |
