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Paul B Fischer
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Single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in. 2 density for ultrahigh density quantum magnetic storage
SY Chou, MS Wei, PR Krauss, PB Fischer
Journal of Applied Physics 76 (10), 6673-6675, 1994
4871994
300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications
W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ...
2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019
1802019
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
1762019
Study of nanoscale magnetic structures fabricated using electron‐beam lithography and quantum magnetic disk
SY Chou, M Wei, PR Krauss, PB Fischer
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
1371994
10 nm electron beam lithography and sub‐50 nm overlay using a modified scanning electron microscope
PB Fischer, SY Chou
Applied physics letters 62 (23), 2989-2991, 1993
1371993
Circulating T cell subpopulations correlate with immune responses at the tumor site and clinical response to PD1 inhibition in non-small cell lung cancer
N Manjarrez-Orduño, LC Menard, S Kansal, P Fischer, B Kakrecha, ...
Frontiers in immunology 9, 1613, 2018
1052018
Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate
LD Yau, PB Fischer
US Patent 5,595,526, 1997
821997
Fabrication of single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in.2 density
PR Krauss, PB Fischer, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
781994
Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching
PB Fischer, SY Chou
Applied physics letters 62 (12), 1414-1416, 1993
751993
Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width
SY Chou, Y Liu, PB Fischer
Applied physics letters 61 (4), 477-479, 1992
751992
10 nm Si pillars fabricated using electron‐beam lithography, reactive ion etching, and HF etching
PB Fischer, K Dai, E Chen, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
711993
Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithography
PB Fischer, MS Wei, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
701993
A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell
K Kuhn, M Agostinelli, S Ahmed, S Chambers, S Cea, S Christensen, ...
Digest. International Electron Devices Meeting,, 73-76, 2002
532002
Renal cell carcinoma (RCC) tumors display large expansion of double positive (DP) CD4+ CD8+ T cells with expression of exhaustion markers
LC Menard, P Fischer, B Kakrecha, PS Linsley, E Wambre, MC Liu, ...
Frontiers in immunology 9, 2728, 2018
442018
Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration
HW Then, M Radosavljevic, K Jun, P Koirala, B Krist, T Talukdar, ...
IEEE Transactions on Electron Devices 67 (12), 5306-5314, 2020
412020
Deconvolution of magnetic force images by Fourier analysis
T Chang, M Lagerquist, JG Zhu, JH Judy, PB Fischer, SY Chou
IEEE transactions on magnetics 28 (5), 3138-3140, 1992
411992
Integrated circuit structures
B Block, VR Rao, P Morrow, R Mehandru, D Ingerly, K Jun, K O'brien, ...
US Patent 10,872,820, 2020
382020
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX
K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ...
2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020
322020
Microelectronic assemblies
AA Elsherbini, H Braunisch, A Aleksov, SM Liff, JM Swan, P Morrow, ...
US Patent 11,348,897, 2022
302022
Double 15‐nm‐wide metal gates 10 nm apart and 70 nm thick on GaAs
SY Chou, PB Fischer
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990
291990
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