| STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1− x B x G Hallais, G Patriarche, L Desvignes, D Débarre, F Chiodi Semiconductor Science and Technology 38 (3), 034003, 2023 | 5 | 2023 |
| Tunable High Speed Atomic Rotor in Bi2Se3 Revealed by Current Noise L Desvignes, VS Stolyarov, M Aprili, F Massee ACS nano 15 (1), 1421-1425, 2021 | 3 | 2021 |
| Laser doped superconducting silicon: from the material to the devices L Desvignes Université Paris-Saclay, 2023 | 1 | 2023 |
| Tuning superconductivity in nanosecond laser annealed boron doped epilayers S Nath, I Turan, L Desvignes, L Largeau, O Mauguin, M Túnica, M Amato, ... arXiv preprint arXiv:2404.02748, 2024 | | 2024 |
| Strain Measurement in Single Crystals by 4D-ED JL Lábár, B Pécz, A van Waveren, G Hallais, L Desvignes, F Chiodi Nanomaterials 13 (6), 1007, 2023 | | 2023 |
| Strain Measurement in Single Crystals by 4D-ED. Nanomaterials 2023, 13, 1007 JL Lábár, B Pécz, A van Waveren, G Hallais, L Desvignes, F Chiodi | | 2023 |
| Evidence of boron pairs in highly boron laser doped silicon L Desvignes, F Chiodi, G Hallais, D Débarre, G Priante, F Liao, G Pacot, ... arXiv preprint arXiv:2207.02520, 2022 | | 2022 |
