| Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ... physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020 | 55 | 2020 |
| Material-Selective Doping of 2D TMDC through AlxOy Encapsulation A Leonhardt, D Chiappe, VV Afanas’ ev, S El Kazzi, I Shlyakhov, ... ACS applied materials & interfaces 11 (45), 42697-42707, 2019 | 53 | 2019 |
| A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From – , – , and – Measurements A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ... IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019 | 35 | 2019 |
| Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1−xmaterials for selector applications S Clima, B Govoreanu, K Opsomer, A Velea, NS Avasarala, W Devulder, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2017 | 33 | 2017 |
| Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission I Shlyakhov, J Chai, M Yang, SJ Wang, VV Afanas’ev, M Houssa, ... Apl Materials 6 (2), 2018 | 18 | 2018 |
| Band alignment at interfaces of two-dimensional materials: internal photoemission analysis VV Afanas’ev, G Delie, M Houssa, I Shlyakhov, A Stesmans, V Trepalin Journal of Physics: Condensed Matter 32 (41), 413002, 2020 | 17 | 2020 |
| Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission I Shlyakhov, J Chai, M Yang, S Wang, VV Afanas' ev, M Houssa, ... physica status solidi (a) 216 (8), 1800616, 2019 | 17 | 2019 |
| Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents VV Afanas' ev, J Schubert, A Neft, G Delie, I Shlyakhov, V Trepalin, ... Microelectronic engineering 215, 110992, 2019 | 6 | 2019 |
| Oxygen‐related defects: minority carrier lifetime killers in n‐type Czochralski silicon wafers for solar cell application I Kolevatov, V Osinniy, M Herms, A Loshachenko, I Shlyakhov, V Kveder, ... physica status solidi (c) 12 (8), 1108-1110, 2015 | 5 | 2015 |
| Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra VA Ilya Shlyakhov, Konstantin Iakoubovskii, Sreetama Banerjee, Abhinav Gaur ... Journal of Applied Physics 129 (2021-04-14), 2021 | 4 | 2021 |
| Band offsets at interfaces of vdW-based hetero-structures with insulating oxides I Shlyakhov | 1 | 2021 |
| Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures ASVA Ilya Shlyakhov, Swati Achra, Niels Bosman, Inge Asselberghs, Cedric ... Journal of Physics D: Applied Physics 54 (29), 295101, 2021 | 1 | 2021 |
| Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures G Delie, I Shlyakhov, K Iakoubovskii, S Achra, VV Afanas' ev Solid-State Electronics 183, 108033, 2021 | | 2021 |
| Band offsets at interfaces of van der Waals-based hetero-structures with insulating oxides V Shlyakhov, I., Afanasiev KU Leuven, 2021 | | 2021 |
| Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulator I Shlyakhov E-MRS 2018 Spring Meeting, Date: 2018/05/01-2018/06/01, Location: Strasbourg …, 2018 | | 2018 |
| Probing the role of substrate chemistry and interface interactions on MoS2 A Leonhardt, N Pellens, D Chiappe, J Ludwig, I Shlyakhov, V Afanasiev, ... 49th IEEE SISC, Date: 2018/05/01-2018/06/01, Location: San Diego, CA, 2018 | | 2018 |
| Probing the role of substrate chemistry and interface interactions on MoS2. S Leonhardt, A., Pellens, N., Chiappe, D., Ludwig, J., Shlyakhov, I ... The 49th IEEE SISC, San Diego, CA, 2018 | | 2018 |
| Photoemission of electrons from metal/2D heterojunctions. V Shlyakhov, I., Trepalin, V., Delie, G., Brems, S., Leonhardt, A ... The Partner Technical Weeks (PTW), Imec, Leuven (Belgium)., 2018 | | 2018 |
| Internal Photoemission experiments on GeSe layers used in OTS selector devices I Shlyakhov, G Ludovic, W Witters, K Opsomer, W Devulder, V Afanasiev Partner Technical Weeks (PTW), Location: Imec, Leuven (Belgium), 2017 | | 2017 |
| Internal Photoemission experiments on GeSe layers used in OTS selector devices. V Shlyakhov, I., Govoreanu, B., Clima, S., Ludovic, G., Witters, W., Opsomer ... The Partner Technical Weeks (PTW), Imec, Leuven (Belgium)., 2017 | | 2017 |
