| Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys DP Samajdar, U Das, AS Sharma, S Das, S Dhar Current Applied Physics 16 (12), 1687-1694, 2016 | 22 | 2016 |
| A first principles study of high Bi content in GaSbBi supercell structures for optoelectronic applications U Das, S Dhar Optik 172, 383-388, 2018 | 6 | 2018 |
| The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb 1− x− y N y Bi x/GaSb: a theoretical approach U Das, S Dhar Journal of materials science 52, 5611-5616, 2017 | 6 | 2017 |
| First principles study of the structural, electronic and optical properties of epitaxial GaSb1− x− yNyBix, lattice matched to GaSb D Utsa, R Thangavel, S Dhar Materials Research Express 5 (11), 115901, 2018 | 5 | 2018 |
| Study of the impact due to spin-orbit coupling effect on the optical properties of InP1− xSbx alloys in mid-infrared applications: A DFT approach U Das Computational Condensed Matter 25, e00499, 2020 | 4 | 2020 |
| and semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis U Das, PP Pal Journal of Semiconductors 38 (8), 082001, 2017 | 4 | 2017 |
| Investigation of the structural and electronic properties of InP1-xSbx alloy for mid-infrared optoelectronic applications: A TB-mBJ DFT study U Das Computational Condensed Matter 23, e00470, 2020 | 3 | 2020 |
| Investigation of electronic and optical properties of PbxSn1-xO2 for optoelectronic applications: A TB-mBJ DFT approach S Mandal, U Das, D Nayak, S Bakshi, B Pradhan Computational Condensed Matter 31, e00691, 2022 | | 2022 |
