Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate SJ Lee, MJ Kim, TY Lee, TI Lee, JH Bong, SW Shin, SH Kim, WS Hwang, ... AIP Advances 9 (12), 2019 | 27 | 2019 |
The work function behavior of aluminum-doped titanium carbide grown by atomic layer deposition J Moon, HJ Ahn, Y Seo, TI Lee, CK Kim, IC Rho, CH Kim, WS Hwang, ... IEEE Transactions on Electron Devices 63 (4), 1423-1427, 2016 | 24 | 2016 |
Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics MJ Kim, K Pak, J Choi, TI Lee, WS Hwang, SG Im, BJ Cho ACS applied materials & interfaces 11 (47), 44513-44520, 2019 | 23 | 2019 |
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current TI Lee, HJ Ahn, MJ Kim, EJ Shin, SH Lee, SW Shin, WS Hwang, HY Yu, ... IEEE Electron Device Letters 40 (4), 502-505, 2019 | 20 | 2019 |
The Impact of an Ultrathin Y2O3Layer on GeO2Passivation in Ge MOS Gate Stacks Y Seo, TI Lee, CM Yoon, BE Park, WS Hwang, H Kim, HY Yu, BJ Cho IEEE Transactions on Electron Devices 64 (8), 3303-3307, 2017 | 19 | 2017 |
Large grain ruthenium for alternative interconnects SJ Yoon, S Lee, TI Lee, A Yoon, BJ Cho IEEE Electron Device Letters 40 (1), 91-94, 2018 | 16 | 2018 |
Fluorine effects originating from the CVD-W process on charge-trap flash memory cells J Moon, TY Lee, HJ Ahn, TI Lee, WS Hwang, BJ Cho IEEE Transactions on Electron Devices 66 (1), 378-382, 2018 | 15 | 2018 |
Fermi-level unpinning technique with excellent thermal stability for n-type germanium GS Kim, SH Kim, TI Lee, BJ Cho, C Choi, C Shin, JH Shim, J Kim, HY Yu ACS applied materials & interfaces 9 (41), 35988-35997, 2017 | 15 | 2017 |
Formation of low-resistivity nickel germanide using atomic layer deposited nickel thin film HJ Ahn, J Moon, Y Seo, TI Lee, CK Kim, WS Hwang, HY Yu, BJ Cho IEEE Transactions on Electron Devices 64 (6), 2599-2603, 2017 | 15 | 2017 |
Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition MJ Kim, J Jeong, TI Lee, J Kim, Y Tak, H Park, SG Im, BJ Cho Macromolecular Materials and Engineering 306 (3), 2000608, 2021 | 12 | 2021 |
Capacitance boosting by anti-ferroelectric blocking layer in charge trap flash memory device EJ Shin, SW Shin, SH Lee, TI Lee, MJ Kim, HJ Ahn, JH Kim, WS Hwang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2020 | 10 | 2020 |
Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors GS Kim, TI Lee, BJ Cho, HY Yu Applied Physics Letters 114 (1), 2019 | 8 | 2019 |
Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks MJ Kim, C Lee, EJ Shin, TI Lee, S Kim, J Jeong, J Choi, WS Hwang, ... Advanced Functional Materials 31 (41), 2103291, 2021 | 7 | 2021 |
Hf‐and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices MJ Kim, C Lee, J Jeong, S Kim, TI Lee, EJ Shin, WS Hwang, SG Im, ... Advanced Electronic Materials 7 (4), 2001197, 2021 | 7 | 2021 |
H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs TI Lee, MC Nguyen, HJ Ahn, MJ Kim, EJ Shin, WS Hwang, HY Yu, R Choi, ... IEEE Electron Device Letters 40 (9), 1350-1353, 2019 | 7 | 2019 |
A novel split-gate ferroelectric FET for a compact and energy efficient neuron G Lee, HJ Kim, EJ Shin, S Kim, TI Lee, BJ Cho IEEE Electron Device Letters 43 (8), 1375-1378, 2022 | 6 | 2022 |
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface TI Lee, Y Seo, J Moon, HJ Ahn, HY Yu, WS Hwang, BJ Cho Solid-State Electronics 130, 57-62, 2017 | 5 | 2017 |
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks Y Seo, CK Kim, TI Lee, WS Hwang, HY Yu, YK Choi, BJ Cho IEEE Transactions on Electron Devices 64 (10), 3998-4001, 2017 | 3 | 2017 |
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2 Y Seo, TI Lee, HJ Ahn, J Moon, WS Hwang, HY Yu, BJ Cho IEEE Transactions on Electron Devices 64 (10), 4242-4245, 2017 | 2 | 2017 |
Channel mobility boosting in a poly-Si channel using Ge diffusion engineering and hydrogen plasma treatment TI Lee, MJ Kim, EJ Shin, G Lee, J Jeong, YH Lee, JH Lee, J Lee, BJ Cho IEEE Electron Device Letters 43 (3), 342-345, 2022 | 1 | 2022 |