Follow
Tae In Lee
Tae In Lee
Verified email at kaist.ac.kr - Homepage
Title
Cited by
Cited by
Year
Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
SJ Lee, MJ Kim, TY Lee, TI Lee, JH Bong, SW Shin, SH Kim, WS Hwang, ...
AIP Advances 9 (12), 2019
272019
The work function behavior of aluminum-doped titanium carbide grown by atomic layer deposition
J Moon, HJ Ahn, Y Seo, TI Lee, CK Kim, IC Rho, CH Kim, WS Hwang, ...
IEEE Transactions on Electron Devices 63 (4), 1423-1427, 2016
242016
Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics
MJ Kim, K Pak, J Choi, TI Lee, WS Hwang, SG Im, BJ Cho
ACS applied materials & interfaces 11 (47), 44513-44520, 2019
232019
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current
TI Lee, HJ Ahn, MJ Kim, EJ Shin, SH Lee, SW Shin, WS Hwang, HY Yu, ...
IEEE Electron Device Letters 40 (4), 502-505, 2019
202019
The Impact of an Ultrathin Y2O3Layer on GeO2Passivation in Ge MOS Gate Stacks
Y Seo, TI Lee, CM Yoon, BE Park, WS Hwang, H Kim, HY Yu, BJ Cho
IEEE Transactions on Electron Devices 64 (8), 3303-3307, 2017
192017
Large grain ruthenium for alternative interconnects
SJ Yoon, S Lee, TI Lee, A Yoon, BJ Cho
IEEE Electron Device Letters 40 (1), 91-94, 2018
162018
Fluorine effects originating from the CVD-W process on charge-trap flash memory cells
J Moon, TY Lee, HJ Ahn, TI Lee, WS Hwang, BJ Cho
IEEE Transactions on Electron Devices 66 (1), 378-382, 2018
152018
Fermi-level unpinning technique with excellent thermal stability for n-type germanium
GS Kim, SH Kim, TI Lee, BJ Cho, C Choi, C Shin, JH Shim, J Kim, HY Yu
ACS applied materials & interfaces 9 (41), 35988-35997, 2017
152017
Formation of low-resistivity nickel germanide using atomic layer deposited nickel thin film
HJ Ahn, J Moon, Y Seo, TI Lee, CK Kim, WS Hwang, HY Yu, BJ Cho
IEEE Transactions on Electron Devices 64 (6), 2599-2603, 2017
152017
Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition
MJ Kim, J Jeong, TI Lee, J Kim, Y Tak, H Park, SG Im, BJ Cho
Macromolecular Materials and Engineering 306 (3), 2000608, 2021
122021
Capacitance boosting by anti-ferroelectric blocking layer in charge trap flash memory device
EJ Shin, SW Shin, SH Lee, TI Lee, MJ Kim, HJ Ahn, JH Kim, WS Hwang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2020
102020
Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors
GS Kim, TI Lee, BJ Cho, HY Yu
Applied Physics Letters 114 (1), 2019
82019
Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks
MJ Kim, C Lee, EJ Shin, TI Lee, S Kim, J Jeong, J Choi, WS Hwang, ...
Advanced Functional Materials 31 (41), 2103291, 2021
72021
Hf‐and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices
MJ Kim, C Lee, J Jeong, S Kim, TI Lee, EJ Shin, WS Hwang, SG Im, ...
Advanced Electronic Materials 7 (4), 2001197, 2021
72021
H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs
TI Lee, MC Nguyen, HJ Ahn, MJ Kim, EJ Shin, WS Hwang, HY Yu, R Choi, ...
IEEE Electron Device Letters 40 (9), 1350-1353, 2019
72019
A novel split-gate ferroelectric FET for a compact and energy efficient neuron
G Lee, HJ Kim, EJ Shin, S Kim, TI Lee, BJ Cho
IEEE Electron Device Letters 43 (8), 1375-1378, 2022
62022
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface
TI Lee, Y Seo, J Moon, HJ Ahn, HY Yu, WS Hwang, BJ Cho
Solid-State Electronics 130, 57-62, 2017
52017
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
Y Seo, CK Kim, TI Lee, WS Hwang, HY Yu, YK Choi, BJ Cho
IEEE Transactions on Electron Devices 64 (10), 3998-4001, 2017
32017
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
Y Seo, TI Lee, HJ Ahn, J Moon, WS Hwang, HY Yu, BJ Cho
IEEE Transactions on Electron Devices 64 (10), 4242-4245, 2017
22017
Channel mobility boosting in a poly-Si channel using Ge diffusion engineering and hydrogen plasma treatment
TI Lee, MJ Kim, EJ Shin, G Lee, J Jeong, YH Lee, JH Lee, J Lee, BJ Cho
IEEE Electron Device Letters 43 (3), 342-345, 2022
12022
The system can't perform the operation now. Try again later.
Articles 1–20