| Steep switching devices for low power applications: Negative differential capacitance/resistance field effect transistors E Ko, J Shin, C Shin Nano Convergence 5, 1-9, 2018 | 70 | 2018 |
| Impact of source/drain metal work function on the electrical characteristics of anatase TiO2-based thin film transistors H Choi, J Shin, C Shin ECS Journal of Solid State Science and Technology 6 (7), P379, 2017 | 23 | 2017 |
| Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor Y Choi, C Han, J Shin, S Moon, J Min, H Park, D Eom, J Lee, C Shin Sensors 22 (11), 4087, 2022 | 13 | 2022 |
| Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector J Shin, E Ko, C Shin IEEE Transactions on Electron Devices 65 (1), 19-22, 2017 | 13 | 2017 |
| Understanding of polarization-induced threshold voltage shift in ferroelectric-gated field effect transistor for neuromorphic applications S Moon, J Shin, C Shin Electronics 9 (5), 704, 2020 | 11 | 2020 |
| Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si: HfO2-based ferroelectric capacitor T Jung, J Shin, C Shin Semiconductor Science and Technology 36 (1), 015005, 2020 | 8 | 2020 |
| Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET J Shin, C Shin Solid-State Electronics 153, 12-15, 2019 | 8 | 2019 |
| Super steep-switching (SS≈ 2 mV/decade) phase-FinFET with Pb (Zr0. 52Ti0. 48) O3 threshold switching device J Shin, E Ko, J Park, SG Kim, JW Lee, HY Yu, C Shin Applied Physics Letters 113 (10), 2018 | 8 | 2018 |
| External resistor-free gate configuration phase transition FDSOI MOSFET J Shin, C Shin IEEE Journal of the Electron Devices Society 7, 186-190, 2018 | 5 | 2018 |
| Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device S Han, S Jeong, J Shin, C Shin IEEE Transactions on Electron Devices 68 (3), 1358-1363, 2021 | 2 | 2021 |
| Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate Y Choi, J Shin, S Moon, C Shin Micromachines 11 (5), 525, 2020 | 2 | 2020 |
| DIBL improvement in hysteresis-free and ferroelectric-gated FinFETs J Shin, C Shin Semiconductor Science and Technology 34 (6), 065001, 2019 | 2 | 2019 |
| Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor Y Choi, J Shin, S Moon, J Min, C Han, C Shin Nanotechnology 34 (18), 185203, 2023 | 1 | 2023 |
| Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System C Yoon, J Min, J Shin, C Shin IEEE Journal of the Electron Devices Society 8, 608-613, 2020 | 1 | 2020 |
| Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis E Ko, J Shin, C Shin Journal of Nanoscience and Nanotechnology 19 (10), 6128-6130, 2019 | 1 | 2019 |
| Impact of Ferroelectric Capacitor’s Electrode Area on the Performance of Negative Capacitance Field Effect Transistor H Cho, J Shin, C Shin Journal of Nanoscience and Nanotechnology 19 (10), 6087-6090, 2019 | | 2019 |
| Experimental Analysis of Gate Leakage Current for FinFET versus Negative Capacitance FinFET E Ko, J Shin, H Cho, K Choe, C Shin | | |
Changhwan ShinProfessor at Korea UniversityVerified email at korea.ac.kr
