Follow
Yong Hun Kwon
Yong Hun Kwon
Samsung Electronics (S.LSI)
No verified email
Title
Cited by
Cited by
Year
P-channel oxide thin film transistors using solution-processed copper oxide
SY Kim, CH Ahn, JH Lee, YH Kwon, S Hwang, JY Lee, HK Cho
ACS applied materials & interfaces 5 (7), 2417-2421, 2013
1352013
Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction
BO Jung, YH Kwon, DJ Seo, DS Lee, HK Cho
Journal of crystal growth 370, 314-318, 2013
662013
Effects of In or Ga doping on the growth behavior and optical properties of Zn O nanorods fabricated by hydrothermal process
GC Park, SM Hwang, JH Choi, YH Kwon, HK Cho, SW Kim, JH Lim, J Joo
physica status solidi (a) 210 (8), 1552-1556, 2013
472013
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation
MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ...
IEEE Journal of Solid-State Circuits 55 (4), 889-897, 2019
422019
Biepitaxial Growth of High-Quality Semiconducting NiO Thin Films on (0001) Al2O3 Substrates: Microstructural Characterization and Electrical Properties
JH Lee, YH Kwon, BH Kong, JY Lee, HK Cho
Crystal growth & design 12 (5), 2495-2500, 2012
402012
Highly sensible ZnO nanowire ultraviolet photodetectors based on mechanical schottky contact
DC Kim, BO Jung, YH Kwon, HK Cho
Journal of the Electrochemical Society 159 (1), K10, 2011
342011
Liquid–solid spinodal decomposition mediated synthesis of Sb2Se3 nanowires and their photoelectric behavior
YH Kwon, M Jeong, HW Do, JY Lee, HK Cho
nanoscale 7, 12913, 2015
332015
Low-Temperature Processable High-Performance Electrochemically Deposited p-Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony
SK Baek, YH Kwon, JH Shin, HS Lee, HK Cho
Advanced Functional Materials, 2015
322015
7.1 A 4-tap 3.5 μm 1.2 Mpixel indirect time-of-flight CMOS image sensor with peak current mitigation and multi-user interference cancellation
MS Keel, D Kim, Y Kim, M Bae, M Ki, B Chung, S Son, H Lee, H Jo, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 106-108, 2021
302021
A 640× 480 indirect time-of-flight CMOS image sensor with 4-tap 7-μm global-shutter pixel and fixed-pattern phase noise self-compensation scheme
MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ...
2019 Symposium on VLSI Circuits, C258-C259, 2019
242019
Crystal growth direction-controlled antimony selenide thin film absorbers produced using an electrochemical approach and intermediate thermal treatment
YH Kwon, YB Kim, M Jeong, HW Do, HK Cho, JY Lee
Solar Energy Materials and Solar Cells 172, 11-17, 2017
242017
All oxide ultraviolet photodetectors based on a p-Cu2O film/n-ZnO heterostructure nanowires
YH Ok, KR Lee, BO Jung, YH Kwon, HK Cho
Thin Solid Films 570, 282-287, 2014
232014
Correlation between electrical properties and point defects in NiO thin films
YH Kwon, SH Chun, JH Han, HK Cho
Metals and Materials International 18, 1003-1007, 2012
182012
Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition
CH Woo, CH Ahn, YH Kwon, JH Han, HK Cho
Metals and Materials International 18, 1055-1060, 2012
172012
A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation
MS Keel, D Kim, Y Kim, M Bae, M Ki, B Chung, S Son, H Lee, SC Shin, ...
IEEE Journal of Solid-State Circuits 56 (11), 3209-3219, 2021
152021
Copper indium selenide water splitting photoanodes with artificially designed heterophasic blended structure and their high photoelectrochemical performances
JS Kim, SK Baek, YB Kim, HW Do, YH Kwon, SW Cho, YD Yun, JH Yoon, ...
Nano Energy 46, 1-10, 2018
152018
A 2.8 μm pixel for time of flight CMOS image sensor with 20 ke-full-well capacity in a tap and 36% quantum efficiency at 940 nm wavelength
Y Kwon, S Seo, S Cho, SH Choi, T Hwang, Y Kim, YG Jin, Y Oh, MS Keel, ...
2020 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2020
132020
Controllable band-gap engineering of the ternary MgxNi1− xO thin films deposited by radio frequency magnetron sputtering for deep ultra-violet optical devices
YH Kwon, SH Chun, HK Cho
Thin Solid Films 529, 417-420, 2013
132013
A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors
T Jung, Y Kwon, S Seo, MS Keel, C Lee, SH Choi, SY Kim, S Cho, Y Kim, ...
Electronic Imaging 32, 1-6, 2020
122020
Three-dimensional (3D) image sensors including polarizer, and depth correction methods and 3D image generation methods based on 3D image sensors
YG Jin, YC Kim, CR Moon, Y Kwon, T Jung
US Patent 11,204,415, 2021
102021
The system can't perform the operation now. Try again later.
Articles 1–20