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Roman Kozlowski
Roman Kozlowski
ITME
Verified email at itme.edu.pl
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Cited by
Year
Development of radiation tolerant semiconductor detectors for the Super-LHC
M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
E Fretwurst, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
482005
Silicon detectors for the sLHC
A Affolder, A Aleev, PP Allport, L Andricek, M Artuso, JP Balbuena, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
442011
Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
C Longeaud, JP Kleider, P Kaminski, R Kozlowski, M Pawlowski, J Cwirko
Semiconductor science and technology 14 (9), 747, 1999
421999
High-temperature Hall effect sensor based on epitaxial graphene on high-purity semiinsulating 4H-SiC
T Ciuk, B Stanczyk, K Przyborowska, D Czolak, A Dobrowolski, J Jagiello, ...
IEEE Transactions on Electron Devices 66 (7), 3134-3138, 2019
272019
High purity semi-insulating 4H-SiC epitaxial layers by defect-competition epitaxy: controlling Si vacancies
MVS Chandrashekhar, I Chowdhury, P Kaminski, R Kozlowski, PB Klein, ...
Applied Physics Express 5 (2), 025502, 2012
262012
High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating InP
P Kaminski, R Kozlowski, S Strzelecka, M Piersa
Journal of Physics: Condensed Matter 16 (2), S225, 2003
192003
High-resolution photoinduced transient spectroscopy of electrically active iron-related defects in electron irradiated high-resistivity silicon
P Kaminski, R Kozlowski, A Jelenski, T Mchedlidze, M Suezawa
Japanese journal of applied physics 42 (9R), 5415, 2003
182003
High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating GaAs
P Kaminski, R Kozlowski
Materials Science and Engineering: B 91, 398-402, 2002
162002
High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon
R Kozłowski, P Kamiński, E Nossarzewska-Orłowska
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2002
152002
Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
C Longeaud, JP Kleider, P Kaminski, R Kozlowski, M Miczuga
Journal of Physics: Condensed Matter 21 (4), 045801, 2008
142008
Formation of electrically active defects in neutron irradiated silicon
P Kaminski, R Kozlowski, E Nossarzewska-Orlowska
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
142002
Compensating defect centres in semi-insulating 6H-SiC
P Kamiński, R Kozłowski, M Miczuga, M Pawłowski, M Kozubal, J Żelazko
Opto-Electronics Review 17 (1), 1-7, 2009
82009
Some new photoluminescence features of W line for neutron-irradiated MCz-Si and FZ-Si
B Surma, P Kaminski, A Wnuk, R Kozlowski
2008 IEEE Nuclear Science Symposium Conference Record, 2561-2564, 2008
62008
Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC
T Ciuk, W Kaszub, K Kosciewicz, A Dobrowolski, J Jagiello, A Chamryga, ...
Current Applied Physics 27, 17-24, 2021
52021
Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
P Kruszewski, P Kaminski, R Kozlowski, J Zelazko, R Czernecki, ...
Semiconductor Science and Technology 36 (3), 035014, 2021
52021
Characterisation of ITME silicon for detectors
E Nossarzewska-Orlowska, Z Luczynski, R Kozlowski, PZ Brzozowski, ...
the 3rd ROSE Workshop, DESY-Proceedings-1998-02, 1998
51998
Blocking characteristics of photoconductive switches based on semi-insulating GAP and GaN
M Suproniuk, K Piwowarski, B Perka, P Kaminski, R Kozlowski, ...
Elektronika ir Elektrotechnika 25 (4), 36-39, 2019
42019
Tailoring the electrical properties of undoped GaP
P Kaminski, R Kozlowski, S Strzelecka, A Hruban, E Jurkiewicz-Wegner, ...
Solid State Phenomena 178, 410-415, 2011
42011
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