| Record pure zincblende phase in GaAs nanowires down to 5 nm in radius E Gil, VG Dubrovskii, G Avit, Y André, C Leroux, K Lekhal, J Grecenkov, ... Nano letters 14 (7), 3938-3944, 2014 | 110 | 2014 |
| Ultralong and defect-free GaN nanowires grown by the HVPE process G Avit, K Lekhal, Y André, C Bougerol, F Reveret, J Leymarie, E Gil, ... Nano letters 14 (2), 559-562, 2014 | 66 | 2014 |
| Strain-compensated (Ga, In) N/(Al, Ga) N/GaN multiple quantum wells for improved yellow/amber light emission K Lekhal, B Damilano, HT Ngo, D Rosales, P De Mierry, S Hussain, ... Applied Physics Letters 106 (14), 2015 | 49 | 2015 |
| Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures TH Ngo, B Gil, P Valvin, B Damilano, K Lekhal, P De Mierry Applied Physics Letters 107 (12), 2015 | 43 | 2015 |
| Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition SY Bae, BO Jung, K Lekhal, SY Kim, JY Lee, DS Lee, M Deki, Y Honda, ... CrystEngComm 18 (9), 1505-1514, 2016 | 36 | 2016 |
| Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability K Lekhal, G Avit, Y André, A Trassoudaine, E Gil, C Varenne, C Bougerol, ... Nanotechnology 23 (40), 405601, 2012 | 36 | 2012 |
| Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction TH Ngo, B Gil, B Damilano, K Lekhal, P De Mierry Superlattices and Microstructures 103, 245-251, 2017 | 30 | 2017 |
| III-nitride core–shell nanorod array on quartz substrates SY Bae, JW Min, HY Hwang, K Lekhal, HJ Lee, YD Jho, DS Lee, YT Lee, ... Scientific Reports 7 (1), 45345, 2017 | 24 | 2017 |
| NC-AFM Study of the Adsorption of Hexamethoxytriphenylene on KBr (001) A Hinaut, K Lekhal, G Aivazian, S Bataillé, A Gourdon, D Martrou, ... The Journal of Physical Chemistry C 115 (27), 13338-13342, 2011 | 22 | 2011 |
| Improved crystal quality of semipolar (101¯ 3) GaN on Si (001) substrates using AlN/GaN superlattice interlayer HJ Lee, SY Bae, K Lekhal, T Mitsunari, A Tamura, Y Honda, H Amano Journal of Crystal Growth 454, 114-120, 2016 | 16 | 2016 |
| Metal organic vapor phase epitaxy of monolithic two-color light-emitting diodes using an InGaN-based light converter B Damilano, H Kim-Chauveau, E Frayssinet, J Brault, S Hussain, K Lekhal, ... Applied Physics Express 6 (9), 092105, 2013 | 15 | 2013 |
| Exceptional crystal-defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE K Lekhal, Y André, A Trassoudaine, E Gil, G Avit, J Cellier, D Castelluci Crystal growth & design 12 (5), 2251-2256, 2012 | 15 | 2012 |
| Selectivearea growth of doped GaN nanorods by pulsedmode MOCVD: Effect of Si and Mg dopants SY Bae, K Lekhal, HJ Lee, JW Min, DS Lee, Y Honda, H Amano physica status solidi (b) 254 (8), 1600722, 2017 | 13 | 2017 |
| Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy K Lekhal, SY Bae, HJ Lee, T Mitsunari, A Tamura, M Deki, Y Honda, ... Japanese Journal of Applied Physics 55 (5S), 05FF03, 2016 | 12 | 2016 |
| Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation Y André, K Lekhal, P Hoggan, G Avit, F Cadiz, A Rowe, D Paget, E Petit, ... The Journal of Chemical Physics 140 (19), 2014 | 11 | 2014 |
| Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission P Ruterana, M Morales, N Chery, TH Ngo, MP Chauvat, K Lekhal, ... Journal of Applied Physics 128 (22), 2020 | 10 | 2020 |
| Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯ 0) GaN homoepitaxial layers OI Barry, A Tanaka, K Nagamatsu, SY Bae, K Lekhal, J Matsushita, ... Journal of Crystal Growth 468, 552-556, 2017 | 10 | 2017 |
| Capping green emitting (Ga, In) N quantum wells with (Al, Ga) N: impact on structural and optical properties S Hussain, K Lekhal, H Kim-Chauveau, P Vennéguès, P De Mierry, ... Semiconductor Science and Technology 29 (3), 035016, 2014 | 10 | 2014 |
| Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si (001) with a directionally sputtered AlN buffer layer HJ Lee, SY Bae, K Lekhal, A Tamura, T Suzuki, M Kushimoto, Y Honda, ... Journal of Crystal Growth 468, 547-551, 2017 | 9 | 2017 |
| Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE K Lekhal, SY Bae, HJ Lee, T Mitsunari, A Tamura, M Deki, Y Honda, ... Journal of Crystal Growth 447, 55-61, 2016 | 8 | 2016 |
Hiroshi AMANO (天野 浩)Nagoya University (名古屋大学)在 nuee.nagoya-u.ac.jp 的电子邮件经过验证
