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Nuo Xu
Nuo Xu
Ph.D. 2012, UC Berkeley; Synopsys; imec; Samsung; TSMC
Verified email at eecs.berkeley.edu
Title
Cited by
Cited by
Year
Characteristics and mechanism of conduction/set process in resistance switching random-access memories
N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92 (23), 232112, 2008
4262008
Reconfigurable Skyrmion Logic Gates
S Luo, M Song, X Li, Y Zhang, J Hong, X Yang, X Zou, N Xu, L You
ACS Nano Letters, 2018
1712018
Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1652008
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor science and technology 23 (7), 075019, 2008
1472008
Resistive Switching in Films for Nonvolatile Memory Application
X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
IEEE electron device letters 4 (30), 334-336, 2009
1272009
A unified physical model of switching behavior in oxide-based RRAM
N Xu, B Gao, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu
2008 Symposium on VLSI Technology, 100-101, 2008
1112008
Highly uniform resistive switching characteristics of memory devices
B Sun, YX Liu, LF Liu, N Xu, Y Wang, XY Liu, RQ Han, JF Kang
Journal of Applied Physics 105 (6), 061630, 2009
1002009
Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications
N Xu, J Sun, IR Chen, L Hutin, Y Chen, J Fujiki, C Qian, TJK Liu
Electron Devices Meeting (IEDM), 2014 IEEE International, 28.8. 1-28.8. 4, 2014
552014
Effectiveness of stressors in aggressively scaled FinFETs
N Xu, B Ho, M Choi, V Moroz, TJK Liu
IEEE Transactions on Electron Devices 59 (6), 1592-1598, 2012
512012
Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor
N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang
Advanced Electronic Materials 4 (11), 1800189, 2018
392018
Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
XW Jiang, J Gong, N Xu, SS Li, J Zhang, Y Hao, LW Wang
Applied Physics Letters 104 (2), 023512, 2014
392014
Mr-gnn: Multi-resolution and dual graph neural network for predicting structured entity interactions
N Xu, P Wang, L Chen, J Tao, J Zhao
arXiv preprint arXiv:1905.09558, 2019
372019
Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
RQH Li-Feng Liu, Jin-Feng Kang, Nuo Xu, Xiao Sun, Chen Chen, Bing Sun, Yi ...
Japanese Journal of Applied Physics 47 (4), 2701-2703, 2008
342008
Carrier-mobility enhancement via strain engineering in future thin-body MOSFETs
N Xu, B Ho, F Andrieu, L Smith, BY Nguyen, O Weber, T Poiroux, ...
IEEE electron device letters 33 (3), 318-320, 2012
322012
Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
H Jiang, X Liu, N Xu, Y He, G Du, X Zhang
IEEE Electron Device Letters 36 (12), 1258-1260, 2015
302015
Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, Q Sun, W Zhang, ...
IEEE Electron Device Letters, 2019
292019
A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology
R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ...
2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013
282013
The effect of current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device
B Sun, L Liu, N Xu, B Gao, Y Wang, D Han, X Liu, R Han, J Kang
Japanese Journal of Applied Physics 48 (4S), 04C061, 2009
282009
Effect of body biasing on the energy-delay performance of logic relays
C Qian, A Peschot, IR Chen, Y Chen, N Xu, TJK Liu
IEEE Electron Device Letters 36 (8), 862-864, 2015
262015
Single‐Cell Stateful Logic Using a Dual‐Bit Memristor
KM Kim, N Xu, X Shao, KJ Yoon, HJ Kim, RS Williams, CS Hwang
physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800629, 2019
252019
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