| Negative differential resistance in negative capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 39 (4), 622-625, 2018 | 113 | 2018 |
| High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces C Fang, Q Yang, Q Yuan, X Gan, J Zhao, Y Shao, Y Liu, G Han, Y Hao Opto-Electronic Advances 4 (6), 200030-1-200030-10, 2021 | 84 | 2021 |
| Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (8), 1157-1160, 2017 | 81 | 2017 |
| Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ... Science China Information Sciences 64 (10), 201401, 2021 | 79 | 2021 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 79 | 2020 |
| GeSn quantum well p-channel tunneling FETs fabricated on Si (001) and (111) with improved subthreshold swing G Han, Y Wang, Y Liu, C Zhang, Q Feng, M Liu, S Zhao, B Cheng, ... IEEE Electron Device Letters 37 (6), 701-704, 2016 | 67 | 2016 |
| Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx J Zhou, Y Peng, G Han, Q Li, Y Liu, J Zhang, M Liao, QQ Sun, DW Zhang, ... IEEE Journal of the Electron Devices Society 6, 41-48, 2017 | 64 | 2017 |
| Theoretical investigation of performance enhancement in GeSn/SiGeSn type-II staggered heterojunction tunneling FET H Wang, G Han, Y Liu, S Hu, C Zhang, J Zhang, Y Hao IEEE Transactions on Electron Devices 63 (1), 303-310, 2015 | 63 | 2015 |
| A review: Photonics devices, architectures, and algorithms for optical neural computing S Xiang, Y Han, Z Song, X Guo, Y Zhang, Z Ren, S Wang, Y Ma, W Zou, ... Journal of Semiconductors 42 (2), 023105, 2021 | 59 | 2021 |
| Rational design of hierarchically porous birnessite-type manganese dioxides nanosheets on different one-dimensional titania-based nanowires for high performance supercapacitors YX Zhang, M Kuang, XD Hao, Y Liu, M Huang, XL Guo, J Yan, GQ Han, ... Journal of Power Sources 270, 675-683, 2014 | 59 | 2014 |
| Design of GeSn-based heterojunction-enhanced N-channel tunneling FET with improved subthreshold swing and ON-state current M Liu, Y Liu, H Wang, Q Zhang, C Zhang, S Hu, Y Hao, G Han IEEE Transactions on Electron Devices 62 (4), 1262-1268, 2015 | 58 | 2015 |
| Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing ZD Luo, S Zhang, Y Liu, D Zhang, X Gan, J Seidel, Y Liu, G Han, M Alexe, ... ACS nano 16 (2), 3362-3372, 2022 | 52 | 2022 |
| Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz J Zhou, J Wu, G Han, R Kanyang, Y Peng, J Li, H Wang, Y Liu, J Zhang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2017 | 50 | 2017 |
| Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Transactions on Electron Devices 65 (3), 1217-1222, 2018 | 44 | 2018 |
| β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process YB Wang, WH Xu, TG You, FW Mu, HD Hu, Y Liu, H Huang, T Suga, ... Science China Physics, Mechanics & Astronomy 63 (7), 277311, 2020 | 43 | 2020 |
| ZrO2 Ferroelectric FET for Non-volatile Memory Application H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ... IEEE Electron Device Letters 40 (9), 1419-1422, 2019 | 42 | 2019 |
| HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ... IEEE Electron Device Letters 43 (2), 216-219, 2021 | 40 | 2021 |
| Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure S Zhang, Y Liu, J Zhou, M Ma, A Gao, B Zheng, L Li, X Su, G Han, J Zhang, ... Nanoscale Research Letters 15, 1-9, 2020 | 39 | 2020 |
| Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region J Zhou, G Han, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Transactions on Electron Devices 64 (12), 4838-4843, 2017 | 38 | 2017 |
| Correlation of gate capacitance with drive current and transconductance in negative capacitance Ge PFETs J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (10), 1500-1503, 2017 | 37 | 2017 |
