| 45nm high-k+ metal gate strain-enhanced transistors C Auth, A Cappellani, JS Chun, A Dalis, A Davis, T Ghani, G Glass, ... 2008 Symposium on VLSI Technology, 128-129, 2008 | 570 | 2008 |
| Mechanical properties of Al2O3/polymethylmethacrylate nanocomposites BJ Ash, DF Rogers, CJ Wiegand, LS Schadler, RW Siegel, ... Polymer Composites 23 (6), 1014-1025, 2002 | 274 | 2002 |
| Intrinsic transistor reliability improvements from 22nm tri-gate technology S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013 | 200 | 2013 |
| BTI reliability of 45 nm high-K+ metal-gate process technology S Pae, M Agostinelli, M Brazier, R Chau, G Dewey, T Ghani, M Hattendorf, ... 2008 IEEE International Reliability Physics Symposium, 352-357, 2008 | 155 | 2008 |
| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 146 | 2018 |
| 13.3 a 7mb stt-mram in 22ffl finfet technology with 4ns read sensing time at 0.9 v using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 131 | 2019 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 100 | 2019 |
| Integrated circuits with selective gate electrode recess S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 8,896,030, 2014 | 94 | 2014 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 65 | 2019 |
| Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces C Jezewski, WA Lanford, CJ Wiegand, JP Singh, PI Wang, JJ Senkevich, ... Journal of the Electrochemical Society 152 (2), C60, 2005 | 63 | 2005 |
| Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures DB Bergstrom, CJ Wiegand US Patent 11,063,151, 2021 | 50 | 2021 |
| Synthesis and characterization of the new fluoropolymer poly (difluorosilylenemethylene); an analogue of poly (vinylidene fluoride) M Lienhard, I Rushkin, G Verdecia, C Wiegand, T Apple, LV Interrante Journal of the American Chemical Society 119 (49), 12020-12021, 1997 | 39 | 1997 |
| Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ... Journal of the Electrochemical Society 151 (7), F157, 2004 | 32 | 2004 |
| Dielectric breakdown in a 45 nm high-k/metal gate process technology C Prasad, M Agostinelli, C Auth, M Brazier, R Chau, G Dewey, T Ghani, ... 2008 IEEE International Reliability Physics Symposium, 667-668, 2008 | 28 | 2008 |
| Selective Deposition of Ultrathin Poly(p‐xylene) Films on Dielectrics Versus Copper Surfaces JJ Senkevich, CJ Wiegand, GR Yang, TM Lu Chemical Vapor Deposition 10 (5), 247-249, 2004 | 25 | 2004 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 22 | 2020 |
| Methods of forming a magnetic random access memory etch spacer and structures formed thereby D Lamborn, O Golonzka, C Wiegand US Patent 9,318,694, 2016 | 18 | 2016 |
| Area scaling on trigate transistors AJ Pethe, JS Sandford, CJ Wiegand, RD James US Patent App. 13/487,111, 2013 | 16 | 2013 |
| Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion JJ Senkevich, PI Wang, CJ Wiegand, TM Lu Applied physics letters 84 (14), 2617-2619, 2004 | 15 | 2004 |
| Hindered copper ion penetration in Parylene-N films A Mallikarjunan, C Wiegand, JJ Senkevich, GR Yang, E Williams, TM Lu Electrochemical and solid-state letters 6 (8), F28, 2003 | 15 | 2003 |
Kaan OguzSenior Research Engineer, Components Research, IntelVerified email at tcd.ie
