Marcelo J. Rozenberg
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Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions
A Georges, G Kotliar, W Krauth, MJ Rozenberg
Reviews of Modern Physics 68 (1), 13, 1996
Two-dimensional electron gas with universal subbands at the surface of SrTiO3
AF Santander-Syro, O Copie, T Kondo, F Fortuna, S Pailhes, R Weht, ...
Nature 469 (7329), 189-193, 2011
Nonvolatile memory with multilevel switching: a basic model
MJ Rozenberg, IH Inoue, MJ Sanchez
Physical review letters 92 (17), 178302, 2004
Mott transition in the d=∞ Hubbard model at zero temperature
GK X. Y. Zhang, M. J. Rozenberg
Physical Review Letters 70, 1666, 1993
Optical conductivity in Mott-Hubbard systems
MJ Rozenberg, G Kotliar, H Kajueter, GA Thomas, DH Rapkine, JM Honig, ...
Physical review letters 75 (1), 105, 1995
Mott-Hubbard transition in infinite dimensions
MJ Rozenberg, XY Zhang, G Kotliar
Physical review letters 69 (8), 1236, 1992
Mott-Hubbard transition in infinite dimensions. II
MJ Rozenberg, G Kotliar, XY Zhang
Physical Review B 49 (15), 10181, 1994
A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator
P Stoliar, J Tranchant, B Corraze, E Janod, MP Besland, F Tesler, ...
Advanced Functional Materials 27 (11), 1604740, 2017
Challenges in materials and devices for resistive-switching-based neuromorphic computing
J Del Valle, JG Ramírez, MJ Rozenberg, IK Schuller
Journal of Applied Physics 124 (21), 2018
Mechanism for bipolar resistive switching in transition-metal oxides
MJ Rozenberg, MJ Sanchez, R Weht, C Acha, F Gomez-Marlasca, P Levy
Physical Review B 81 (11), 115101, 2010
Transfer of spectral weight in spectroscopies of correlated electron systems
MJ Rozenberg, G Kotliar, H Kajueter
Physical Review B 54 (12), 8452, 1996
Landau theory of the finite temperature Mott transition
G Kotliar, E Lange, MJ Rozenberg
Physical review letters 84 (22), 5180, 2000
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
K Fujiwara, T Nemoto, MJ Rozenberg, Y Nakamura, H Takagi
Japanese Journal of Applied Physics 47 (8R), 6266, 2008
Integer-filling metal-insulator transitions in the degenerate Hubbard model
MJ Rozenberg
Physical Review B 55 (8), R4855, 1997
Resistive switching in Mott insulators and correlated systems
E Janod, J Tranchant, B Corraze, M Querré, P Stoliar, M Rozenberg, ...
Advanced Functional Materials 25 (40), 6287-6305, 2015
Finite temperature mott transition in the hubbard model in infinite dimensions
MJ Rozenberg, R Chitra, G Kotliar
Physical review letters 83 (17), 3498, 1999
Critical behavior near the Mott transition in the Hubbard model
G Moeller, Q Si, G Kotliar, M Rozenberg, DS Fisher
Physical review letters 74 (11), 2082, 1995
Subthreshold firing in Mott nanodevices
J Del Valle, P Salev, F Tesler, NM Vargas, Y Kalcheim, P Wang, J Trastoy, ...
Nature 569 (7756), 388-392, 2019
Mechanism of electric-pulse-induced resistance switching in manganites
M Quintero, P Levy, AG Leyva, MJ Rozenberg
Physical review letters 98 (11), 116601, 2007
Strong electron correlation effects in nonvolatile electronic memory devices
MJ Rozenberg, IH Inoue, MJ Sanchez
Applied Physics Letters 88 (3), 2006
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