| Capacitor-less stochastic leaky-FeFET neuron of both excitatory and inhibitory connections for SNN with reduced hardware cost J Luo, L Yu, T Liu, M Yang, Z Fu, Z Liang, L Chen, C Chen, S Liu, S Wu, ... 2019 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2019 | 51 | 2019 |
| A novel ferroelectric FET-based adaptively-stochastic neuron for stimulated-annealing based optimizer with ultra-low hardware cost J Luo, T Liu, Z Fu, X Wei, M Yang, L Chen, Q Huang, R Huang IEEE Electron Device Letters 43 (2), 308-311, 2021 | 14 | 2021 |
| Energy-and area-efficient Fe-FinFET-based time-domain mixed-signal computing in memory for edge machine learning J Luo, W Xu, Y Du, B Fu, J Song, Z Fu, M Yang, Y Li, L Ye, Q Huang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 19.5. 1-19.5. 4, 2021 | 13 | 2021 |
| New insights into memory window of ferroelectric FET impacted by read operations with awareness of polarization switching dynamics C Su, Q Huang, K Wang, Z Fu, R Huang IEEE Transactions on Electron Devices 69 (9), 5310-5315, 2022 | 5 | 2022 |
| First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through Design Technology Co-Optimization Z Fu, S Cao, H Zheng, J Luo, Q Huang, R Huang 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| A Novel Small-Signal Ferroelectric Capacitance based Content Addressable Memory for Area-and Energy-Efficient Lifelong Learning W Xu, Z Fu, K Wang, C Su, J Luo, Z Chen, Q Huang, R Huang IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Novel ferroelectric tunnel FinFET based encryption-embedded computing-in-memory for secure AI with high area-and energy-efficiency J Luo, H Shao, B Fu, Z Fu, W Xu, K Wang, M Yang, Y Li, X Lv, Q Huang, ... 2022 International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2022 | 2 | 2022 |
| Device modeling and application simulation of ferroelectric-FETS with dynamic multi-domain behavior Z Fu, C Chen, J Luo, Q Huang, R Huang 2020 China Semiconductor Technology International Conference (CSTIC), 1-4, 2020 | 2 | 2020 |
| Novel Asymmetric Operation Scheme for HfO2-based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts Z Fu, K Wang, S Xu, Q Huang, R Huang IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation Z Fu, K Wang, B Fu, S Xu, H Zheng, J Luo, C Su, W Xu, X Lv, Q Huang, ... 2022 International Electron Devices Meeting (IEDM), 24.5. 1-24.5. 4, 2022 | 1 | 2022 |
| A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance M Yang, K Wang, B Yu, Z Fu, C Su, R Huang, Q Huang 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area-and Energy-Efficiency W Xu, J Luo, Z Fu, K Wang, Q Huang, R Huang 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Physical Modeling of Hafnia-based 3D Ferroelectric Polarization Switching with Cylindrical Structure C Su, M Deng, L Chen, K Wang, Z Fu, S Xu, R Huang, Q Huang 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area-and Energy-Efficient Quantized Neural Networks W Xu, J Luo, B Fu, Z Fu, K Wang, C Su, Q Huang, R Huang 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM Z Fu, S Cao, H Zheng, J Luo, Q Huang, R Huang IEEE Transactions on Electron Devices, 2024 | | 2024 |
| A Novel FeFET Array-Based PUF: Co-optimization of Entropy Source and CRP Generation for Enhanced Robustness in IoT Security H Shao, Y Zhou, W Huang, C Su, Z Fu, W Luo, K Tang, R Huang 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and … C Su, Z Liang, Z Fu, S Xu, K Wang, P Cai, L Chen, R Huang, Q Huang ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | | 2023 |
| A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI H Shao, J Luo, Z Fu, Q Huang, R Huang 2023 China Semiconductor Technology International Conference (CSTIC), 1-4, 2023 | | 2023 |
| New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM Z Fu, M Yang, K Wang, Q Huang, R Huang 2023 Silicon Nanoelectronics Workshop (SNW), 55-56, 2023 | | 2023 |
| New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM M Deng, C Su, Z Fu, K Wang, R Huang, Q Huang 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
