Mark Lundstrom

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Supriyo DattaProfessor, Purdue UniversityVerified email at purdue.edu
Jing GuoProfessor, University of FloridaVerified email at ufl.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
Dmitri E. NikonovPrincipal Engineer, IntelVerified email at intel.com
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyVerified email at berkeley.edu
Jesse MaassenAssociate Professor of Physics, Dalhousie UniversityVerified email at dal.ca
Neophytos NeophytouSchool of Engineering, University of WarwickVerified email at warwick.ac.uk
Changwook JeongAssociate Professor, Graduate School of Semicondutor Materials and Devices Engineering, UNISTVerified email at unist.ac.kr
Hongjie DaiProfessor of chemistry, stanford universityVerified email at stanford.edu
Jing WangNVIDIA CorporationVerified email at nvidia.com
Xufeng WangPurdue UniversityVerified email at purdue.edu
RASEONG KIMIntel CorporationVerified email at intel.com
Jeffery L. GrayAssociate Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeVerified email at us.ibm.com
Mathieu LuisierETH ZurichVerified email at iis.ee.ethz.ch
James E. MooreSolAero TechnologiesVerified email at rocketlabusa.com
Richard AhrenkielFellow Emeritus, National Renewable Energy LaboratoryVerified email at nrel.gov
Gengchiau LiangNational University of SingaporeVerified email at nus.edu.sg
Sayed HasanIntel CorporationVerified email at intel.com

Mark Lundstrom

Professor of Electrical and Computer Engineering, Purdue University

Verified email at purdue.edu - Homepage

electronic devices and materials


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003	3941	2003
Fundamentals of carrier transport, 2nd edn M Lundstrom Measurement Science and Technology 13 (2), 230-230, 2002	1959	2002
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002	1367	2002
Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012	1059	2012
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003	923	2003
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004	785	2004
Elementary scattering theory of the Si MOSFET M Lundstrom IEEE Electron Device Letters 18 (7), 361-363, 1997	778	1997
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004	759	2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004	726	2004
Essential physics of carrier transport in nanoscale MOSFETs M Lundstrom, Z Ren IEEE Transactions on Electron Devices 49 (1), 133-141, 2002	708	2002
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ... Nature Comm. 6, 2015	618	2015
Moore's law forever? M Lundstrom Science 299 (5604), 210-211, 2003	603	2003
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic Journal of Applied physics 92 (7), 3730-3739, 2002	565	2002
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006	552	2006
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Wang, E Polizzi, M Lundstrom Journal of Applied Physics 96 (4), 2192-2203, 2004	443	2004
Performance comparison between pin tunneling transistors and conventional MOSFETs SO Koswatta, MS Lundstrom, DE Nikonov IEEE Transactions on Electron Devices 56 (3), 456-465, 2009	440	2009
Fundamentals of carrier transport M Lundstrom Addison-Wesley, 1990	420	1990
Modeling of nanoscale devices MP Anantram, MS Lundstrom, DE Nikonov Proceedings of the IEEE 96 (9), 1511-1550, 2008	397	2008
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004	387	2004
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002	378	2002

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