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Jun-young Kim
Jun-young Kim
Research Scientist, Institute of Materials Research and Engineering, A*STAR
Verified email at imre.a-star.edu.sg
Title
Cited by
Cited by
Year
Perpendicular magnetic anisotropy in Heusler alloy films and their magnetoresistive junctions
A Hirohata, W Frost, M Samiepour, J Kim
Materials 11 (1), 105, 2018
462018
Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook
J Kim, X Ju, KW Ang, D Chi
ACS nano 17 (3), 1831-1844, 2023
342023
Thickness-dependent magnetic properties of oxygen-deficient EuO
M Barbagallo, T Stollenwerk, J Kroha, NJ Steinke, NDM Hine, JFK Cooper, ...
Physical Review B 84 (7), 075219, 2011
282011
Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness
H Wu, I Sudoh, R Xu, W Si, CAF Vaz, J Kim, G Vallejo-Fernandez, ...
Journal of Physics D: Applied Physics 51 (21), 215003, 2018
252018
Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures
R Chen, X Wang, H Cheng, KJ Lee, D Xiong, JY Kim, S Li, H Yang, ...
Cell Reports Physical Science 2 (11), 2021
242021
Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film
T Ogasawara, J Kim, Y Ando, A Hirohata
Journal of Magnetism and Magnetic Materials 473, 7-11, 2019
202019
Interfacial structure and transport properties of Fe/GaAs (001)
LR Fleet, H Kobayashi, Y Ohno, JY Kim, CHW Barnes, A Hirohata
Journal of Applied Physics 109 (7), 2011
202011
Enhancement of spin Hall conductivity in W–Ta alloy
JY Kim, DS Han, M Vafaee, S Jaiswal, K Lee, G Jakob, M Kläui
Applied Physics Letters 117 (14), 2020
192020
Schottky barrier height in Fe/GaAs films
LR Fleet, K Yoshida, H Kobayashi, Y Ohno, H Kurebayashi, JY Kim, ...
IEEE transactions on magnetics 46 (6), 1737-1740, 2010
182010
Magneto-optical detection of spin accumulation under the influence of mechanical rotation
A Hirohata, Y Baba, BA Murphy, B Ng, Y Yao, K Nagao, J Kim
Scientific reports 8 (1), 1974, 2018
122018
Growth and characterisation of ferromagnetic and antiferromagnetic Fe2+ xVyAl Heusler alloy films
T Huminiuc, O Whear, T Takahashi, J Kim, A Vick, G Vallejo-Fernandez, ...
Journal of Physics D: Applied Physics 51 (32), 325003, 2018
112018
Tuning Spin‐Orbit Torques Across the Phase Transition in VO2/NiFe Heterostructure
J Kim, J Cramer, K Lee, DS Han, D Go, P Salev, PN Lapa, NM Vargas, ...
Advanced functional materials 32 (17), 2111555, 2022
92022
Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions
E Jackson, Y Wu, W Frost, JY Kim, M Samiepour, K Elphick, M Sun, ...
Journal of Physics D: Applied Physics 53 (1), 014004, 2019
82019
Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN (0001)
JY Kim, A Ionescu, R Mansell, I Farrer, F Oehler, CJ Kinane, JFK Cooper, ...
Journal of Applied Physics 121 (4), 2017
82017
Structure and magnetic properties of an epitaxial Fe (110)/MgO (111)/GaN (0001) heterostructure
N Khalid, JY Kim, A Ionescu, T Hussain, F Oehler, T Zhu, RA Oliver, ...
Journal of Applied Physics 123 (10), 2018
42018
Optically induced and detected spin current
A Hirohata, JY Kim
Spin Current, 49-64, 2012
42012
Sublimation-based wafer-scale monolayer WS 2 formation via self-limited thinning of few-layer WS 2
M Chen, J Chai, J Wu, H Zheng, WY Wu, J Lourembam, M Lin, JY Kim, ...
Nanoscale Horizons 9 (1), 132-142, 2024
32024
Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer
J Kim, M Chen, WD Wang, PC Lim, J Kim, J Chai, M Zhang, SL Teo, M Lin, ...
ACS Applied Electronic Materials 4 (10), 5026-5033, 2022
22022
Development of an optically gated spin-polarized transistor
JY Kim, M Samiepour, E Jackson, J Ryu, D Iizasa, T Saito, M Kohda, ...
Physical Review B 106 (13), 134404, 2022
12022
Revealing the higher-order spin nature of the Hall effect in non-collinear antiferromagnet
A Rajan, TG Saunderson, FR Lux, RY Díaz, HM Abdullah, A Bose, ...
arXiv preprint arXiv:2304.10747, 2023
2023
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