| A high efficiency solution processed polymer inverted triple-junction solar cell exhibiting a power conversion efficiency of 11.83% AR bin Mohd Yusoff, D Kim, HP Kim, FK Shneider, WJ Da Silva, J Jang Energy & Environmental Science 8 (1), 303-316, 2015 | 405 | 2015 |
| Ideal host and guest system in phosphorescent OLEDs WS Jeon, TJ Park, SY Kim, R Pode, J Jang, JH Kwon Organic Electronics 10 (2), 240-246, 2009 | 277 | 2009 |
| Electric-field-enhanced crystallization of amorphous silicon J Jang, JY Oh, SK Kim, YJ Choi, SY Yoon, CO Kim Nature 395 (6701), 481-483, 1998 | 276 | 1998 |
| High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method C Avis, J Jang Journal of Materials Chemistry 21 (29), 10649-10652, 2011 | 256 | 2011 |
| The architecture of the electron transport layer for a perovskite solar cell MFM Noh, CH Teh, R Daik, EL Lim, CC Yap, MA Ibrahim, NA Ludin, ... Journal of Materials Chemistry C 6 (4), 682-712, 2018 | 243 | 2018 |
| Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors MDH Chowdhury, P Migliorato, J Jang Applied Physics Letters 97 (17), 2010 | 231 | 2010 |
| Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors M Mativenga, MH Choi, JW Choi, J Jang IEEE Electron Device Letters 32 (2), 170-172, 2010 | 213 | 2010 |
| Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits DH Kang, I Kang, SH Ryu, J Jang IEEE electron device letters 32 (10), 1385-1387, 2011 | 199 | 2011 |
| Metal-induced crystallization of amorphous silicon SY Yoon, SJ Park, KH Kim, J Jang Thin Solid Films 383 (1-2), 34-38, 2001 | 193 | 2001 |
| Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer S Yang, DH Cho, MK Ryu, SHK Park, CS Hwang, J Jang, JK Jeong Applied physics letters 96 (21), 2010 | 181 | 2010 |
| Displays develop a new flexibility J Jang Materials Today 9 (4), 46-52, 2006 | 175 | 2006 |
| Selforganized organic thinfilm transistors on plastic HY Choi, SH Kim, J Jang Advanced materials 16 (8), 732-736, 2004 | 167 | 2004 |
| A new a-Si: H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes JC Goh, J Jang, KS Cho, CK Kim IEEE Electron Device Letters 24 (9), 583-585, 2003 | 166 | 2003 |
| High-performance thin-film transistor with 6, 13-bis (triisopropylsilylethynyl) pentacene by inkjet printing SH Lee, MH Choi, SH Han, DJ Choo, J Jang, SK Kwon Organic Electronics 9 (5), 721-726, 2008 | 159 | 2008 |
| Low temperature metal induced crystallization of amorphous silicon using a Ni solution SY Yoon, KH Kim, CO Kim, JY Oh, J Jang Journal of applied physics 82 (11), 5865-5867, 1997 | 157 | 1997 |
| Retracted: HighEfficiency, Blue, Green, and NearInfrared LightEmitting Diodes Based on Triple Cation Perovskite HP Kim, J Kim, BS Kim, HM Kim, J Kim, ARM Yusoff, J Jang, ... Advanced Optical Materials 5 (7), 1600920, 2017 | 144 | 2017 |
| Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors MDH Chowdhury, P Migliorato, J Jang Applied Physics Letters 98 (15), 2011 | 142 | 2011 |
| Bulk accumulation a-IGZO TFT for high current and turn-on voltage uniformity M Mativenga, S An, J Jang IEEE electron device letters 34 (12), 1533-1535, 2013 | 140 | 2013 |
| Fully transparent and rollable electronics M Mativenga, D Geng, B Kim, J Jang ACS applied materials & interfaces 7 (3), 1578-1585, 2015 | 131 | 2015 |
| Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor P Migliorato, M Delwar Hossain Chowdhury, J Gwang Um, M Seok, ... Applied Physics Letters 101 (12), 2012 | 131 | 2012 |
Mallory MativengaSky CP Limited (UK), Kyung Hee University (South Korea)在 khu.ac.kr 的电子邮件经过验证
