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Данил Валериевич Николаев (Danil Nikolaev)
Данил Валериевич Николаев (Danil Nikolaev)
Северо-Восточный федеральный университет / North-Eastern Federal University
Verified email at s-vfu.ru - Homepage
Title
Cited by
Cited by
Year
Graphene-based humidity sensors: The origin of alternating resistance change
VI Popov, DV Nikolaev, VB Timofeev, SA Smagulova, IV Antonova
Nanotechnology 28 (35), 355501, 2017
712017
Conductive layers in diamond formed by hydrogen ion implantation and annealing
VP Popov, LN Safronov, OV Naumova, DV Nikolaev, IN Kupriyanov, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012
422012
Synthesis of Luminescent N‐Doped Carbon Dots by Hydrothermal Treatment
AE Tomskaya, MN Egorova, AN Kapitonov, DV Nikolaev, VI Popov, ...
Physica status solidi (b) 255 (1), 1700222, 2018
262018
Traps at the bonded interface in silicon-on-insulator structures
IV Antonova, OV Naumova, DV Nikolaev, VP Popov, J Stano, VA Skuratov
Applied physics letters 79 (27), 4539-4540, 2001
192001
Properties of silicon nanolayers on insulator
OV Naumova, EV Vohmina, TA Gavrilova, NV Dudchenko, DV Nikolaev, ...
Materials Science and Engineering: B 135 (3), 238-241, 2006
142006
Preparation of transparent conducting films from CVD graphene by lamination and their characterization
VB Timofeev, VI Popov, DV Nikolaev, TE Timofeeva, SA Smagulova
Nanotechnologies in Russia 12 (1), 62-65, 2017
102017
Diamond–graphite heterostructures formed by nitrogen and hydrogen implantation and annealing
VP Popov, LN Safronov, OV Naumova, DV Nikolaev, YN Palyvanov, ...
Advanced Materials Research 276, 27-33, 2011
82011
Chemical vapor deposition synthesis of large-area graphene films
DV Nikolaev, VI Popov, VB Timofeev, SA Smagulova
Journal of Structural Chemistry 59, 766-772, 2018
72018
Charge accumulation in oxide and interface states of silicon-on-insulator structures after irradiation by electrons and γ-rays
DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova
Fizika i Tekhnika Poluprovodnikov 37 (4), 443-449, 2003
72003
Electrical properties of textiles treated with graphene oxide suspension
DV Nikolaev, ZI Evseev, SA Smagulova, IV Antonova
Materials 14 (8), 1999, 2021
62021
The charge accumulation in an insulator and the states at interfaces of silicon-on-insulator structures as a result of irradiation with electrons and gamma-ray photons
DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova
Semiconductors 37, 426-432, 2003
62003
The Impact of SF6 Plasma on the Properties of Graphene Oxide
EP Neustroev, MV Nogovitsyna, BD Soloviev, II Kurkina, DV Nikolaev
Journal of Structural Chemistry 59, 793-798, 2018
42018
Graphene films as a basis for creating flexible transparent electrodes
DV Nikolaev, VI Popov, AA Trofimova, NO Sleptsov, VB Timofeev, ...
AIP Conference Proceedings 2041 (1), 2018
22018
Transformation of interface states in silicon-on-insulator structures under annealing in hydrogen atmosphere
IV Antonova, I Stano, DV Nikolaev, OV Naumova, VP Popov, VA Skuratov
Semiconductors 36, 60-64, 2002
22002
Interface states and deep-level centers in silicon-on-insulator structures
IV Antonova, J Stano, DV Nikolaev, OV Naumova, VP Popov, VA Skuratov
Semiconductors 35, 912-917, 2001
22001
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer
IE Tyschenko, AA Frantsuzov, OV Naumova, BI Fomin, DV Nikolaev, ...
Solid State Phenomena 108, 77-82, 2005
12005
Charge accumulation in oxides of SOI wafers fabricated by hydrogen slicing
OV Naumova, AA Frantzusov, DV Nikolaev, VP Popov
Proceedings-Electrochemical Society, 255-260, 2005
12005
Changes in the parameters of silicon-on-insulator structures under irradiation
IV Antonova, DV Nikolaev, OV Naumova, VP Popov, SA Smagulova
Proceedings-Electrochemical Society, 505-510, 2003
12003
Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields
DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova
Semiconductors 36, 800-804, 2002
12002
Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation
IV Antonova, DV Nikolaev, OV Naumova, VP Popov
Solid State Phenomena 82, 491-496, 2001
12001
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