Graphene-based humidity sensors: The origin of alternating resistance change VI Popov, DV Nikolaev, VB Timofeev, SA Smagulova, IV Antonova Nanotechnology 28 (35), 355501, 2017 | 71 | 2017 |
Conductive layers in diamond formed by hydrogen ion implantation and annealing VP Popov, LN Safronov, OV Naumova, DV Nikolaev, IN Kupriyanov, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 42 | 2012 |
Synthesis of Luminescent N‐Doped Carbon Dots by Hydrothermal Treatment AE Tomskaya, MN Egorova, AN Kapitonov, DV Nikolaev, VI Popov, ... Physica status solidi (b) 255 (1), 1700222, 2018 | 26 | 2018 |
Traps at the bonded interface in silicon-on-insulator structures IV Antonova, OV Naumova, DV Nikolaev, VP Popov, J Stano, VA Skuratov Applied physics letters 79 (27), 4539-4540, 2001 | 19 | 2001 |
Properties of silicon nanolayers on insulator OV Naumova, EV Vohmina, TA Gavrilova, NV Dudchenko, DV Nikolaev, ... Materials Science and Engineering: B 135 (3), 238-241, 2006 | 14 | 2006 |
Preparation of transparent conducting films from CVD graphene by lamination and their characterization VB Timofeev, VI Popov, DV Nikolaev, TE Timofeeva, SA Smagulova Nanotechnologies in Russia 12 (1), 62-65, 2017 | 10 | 2017 |
Diamond–graphite heterostructures formed by nitrogen and hydrogen implantation and annealing VP Popov, LN Safronov, OV Naumova, DV Nikolaev, YN Palyvanov, ... Advanced Materials Research 276, 27-33, 2011 | 8 | 2011 |
Chemical vapor deposition synthesis of large-area graphene films DV Nikolaev, VI Popov, VB Timofeev, SA Smagulova Journal of Structural Chemistry 59, 766-772, 2018 | 7 | 2018 |
Charge accumulation in oxide and interface states of silicon-on-insulator structures after irradiation by electrons and γ-rays DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova Fizika i Tekhnika Poluprovodnikov 37 (4), 443-449, 2003 | 7 | 2003 |
Electrical properties of textiles treated with graphene oxide suspension DV Nikolaev, ZI Evseev, SA Smagulova, IV Antonova Materials 14 (8), 1999, 2021 | 6 | 2021 |
The charge accumulation in an insulator and the states at interfaces of silicon-on-insulator structures as a result of irradiation with electrons and gamma-ray photons DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova Semiconductors 37, 426-432, 2003 | 6 | 2003 |
The Impact of SF6 Plasma on the Properties of Graphene Oxide EP Neustroev, MV Nogovitsyna, BD Soloviev, II Kurkina, DV Nikolaev Journal of Structural Chemistry 59, 793-798, 2018 | 4 | 2018 |
Graphene films as a basis for creating flexible transparent electrodes DV Nikolaev, VI Popov, AA Trofimova, NO Sleptsov, VB Timofeev, ... AIP Conference Proceedings 2041 (1), 2018 | 2 | 2018 |
Transformation of interface states in silicon-on-insulator structures under annealing in hydrogen atmosphere IV Antonova, I Stano, DV Nikolaev, OV Naumova, VP Popov, VA Skuratov Semiconductors 36, 60-64, 2002 | 2 | 2002 |
Interface states and deep-level centers in silicon-on-insulator structures IV Antonova, J Stano, DV Nikolaev, OV Naumova, VP Popov, VA Skuratov Semiconductors 35, 912-917, 2001 | 2 | 2001 |
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer IE Tyschenko, AA Frantsuzov, OV Naumova, BI Fomin, DV Nikolaev, ... Solid State Phenomena 108, 77-82, 2005 | 1 | 2005 |
Charge accumulation in oxides of SOI wafers fabricated by hydrogen slicing OV Naumova, AA Frantzusov, DV Nikolaev, VP Popov Proceedings-Electrochemical Society, 255-260, 2005 | 1 | 2005 |
Changes in the parameters of silicon-on-insulator structures under irradiation IV Antonova, DV Nikolaev, OV Naumova, VP Popov, SA Smagulova Proceedings-Electrochemical Society, 505-510, 2003 | 1 | 2003 |
Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields DV Nikolaev, IV Antonova, OV Naumova, VP Popov, SA Smagulova Semiconductors 36, 800-804, 2002 | 1 | 2002 |
Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation IV Antonova, DV Nikolaev, OV Naumova, VP Popov Solid State Phenomena 82, 491-496, 2001 | 1 | 2001 |