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Callum Middleton
Callum Middleton
Compound Semiconductor Applications Catapult
Verified email at csa.catapult.org.uk
Title
Cited by
Cited by
Year
Raman Thermography of Peak Channel Temperature in -Ga2O3 MOSFETs
JW Pomeroy, C Middleton, M Singh, S Dalcanale, MJ Uren, MH Wong, ...
IEEE Electron Device Letters 40 (2), 189-192, 2018
692018
Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
D Liu, D Francis, F Faili, C Middleton, J Anaya, JW Pomeroy, DJ Twitchen, ...
Scripta Materialia 128, 57-60, 2017
572017
Surface zeta potential and diamond seeding on gallium nitride films
S Mandal, ELH Thomas, C Middleton, L Gines, JT Griffiths, MJ Kappers, ...
ACS omega 2 (10), 7275-7280, 2017
452017
Thermal transport in superlattice castellated field effect transistors
C Middleton, S Dalcanale, JW Pomeroy, MJ Uren, J Chang, J Parke, ...
IEEE Electron Device Letters 40 (9), 1374-1377, 2019
112019
Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices
C Middleton, H Chandrasekar, M Singh, JW Pomeroy, MJ Uren, D Francis, ...
Applied Physics Express 12 (2), 024003, 2019
102019
High efficiency aln/gan hemts for q-band applications with an improved thermal dissipation
R Kabouche, R Pecheux, K Harrouche, E Okada, F Medjdoub, J Derluyn, ...
International Journal of High Speed Electronics and Systems 28 (01n02), 1940003, 2019
92019
Transient thermoreflectance wafer mapping for process control and development: GaN-on-Diamond
JW Pomeroy, RB Simon, C Middleton, M Kuball
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2017
32017
Thermal characteristics of superlattice castellated FETs
C Middleton, J Chang, C Mishler, R Howell, M Kuball
Thermal Management of Gallium Nitride Electronics, 223-230, 2022
2022
Optimising heat flow in wide and ultra-wide bandgap devices: the applications of diamond
C Middleton
University of Bristol, 2019
2019
Optimising heat flow in high performance wide and ultra-wide bandgap devices
C MIDDLETON
2018
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