| C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability T Bi, Y Chang, W Fei, M Iwataki, A Morishita, Y Fu, N Niikura, H Kawarada Carbon 175, 525-533, 2021 | 33 | 2021 |
| Performance comparison of GaN HEMTs on diamond and SiC substrates based on surface potential model Q Wu, Y Xu, J Zhou, Y Kong, T Chen, Y Wang, F Lin, Y Fu, Y Jia, X Zhao, ... ECS Journal of Solid State Science and Technology 6 (12), Q171, 2017 | 31 | 2017 |
| MOSFETs on (110) C–H diamond: ALD Al₂O₃/diamond interface analysis and high performance normally-OFF operation realization B Liu, T Bi, Y Fu, K Kudara, S Imanishi, K Liu, B Dai, J Zhu, H Kawarada IEEE Transactions on Electron Devices 69 (3), 949-955, 2022 | 24 | 2022 |
| Characterization and modeling of hydrogen-terminated MOSFETs with single-crystal and polycrystalline diamond Y Fu, R Xu, Y Xu, J Zhou, Q Wu, Y Kong, Y Zhang, T Chen, B Yan IEEE Electron Device Letters 39 (11), 1704-1707, 2018 | 20 | 2018 |
| Microwave diamond devices technology: field‐effect transistors and modeling Z Chen, Y Fu, H Kawarada, Y Xu International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 17 | 2021 |
| C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation X Zhu, T Bi, X Yuan, Y Chang, R Zhang, Y Fu, J Tu, Y Huang, J Liu, C Li, ... Applied Surface Science 593, 153368, 2022 | 16 | 2022 |
| −10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition … Y Fu, Y Chang, S Kono, A Hiraiwa, K Kanehisa, X Zhu, R Xu, Y Xu, ... IEEE Transactions on Electron Devices 69 (5), 2236-2242, 2022 | 13 | 2022 |
| A large-signal model for two-dimensional hole gas diamond MOSFET based on the QPZD Y Fu, R Xu, J Zhou, X Yu, Z Wen, Y Kong, T Chen, Y Zhang, B Yan, J He, ... IEEE Access 7, 76868-76877, 2019 | 11 | 2019 |
| Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm Y Fu, Y Chang, X Zhu, R Xu, Y Xu, H Kawarada IEEE Transactions on Electron Devices 69 (8), 4144-4152, 2022 | 10 | 2022 |
| Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3 Z Chen, X Yu, J Zhou, S Mao, Y Fu, B Yan, R Xu, Y Kong, T Chen, Y Li, ... Applied Physics Letters 117 (13), 2020 | 9 | 2020 |
| Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C-Si-O) Diamond Capacitors Y Fu, S Kono, H Kawarada, A Hiraiwa IEEE Transactions on Electron Devices 69 (7), 3604 - 3610, 2022 | 6 | 2022 |
| −400 mA mm−1 Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs X Zhu, S Shao, Y Chang, R Zhang, SYY Chung, Y Fu, T Bi, Y Huang, K An, ... IEEE Electron Device Letters 43 (5), 789-792, 2022 | 6 | 2022 |
| A Study of Linearity of C-H Diamond FETs for S-Band Power Application Y Fu, X Yu, J Zhou, R Xu, B Yan, Y Xu IEEE Transactions on Electron Devices 68 (8), 3950-3955, 2021 | 6 | 2021 |
| Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs Y Fu, Y Xu, R Xu, J Zhou, Y Kong 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium …, 2017 | 6 | 2017 |
| Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature Y Fu, RM Xu, XX Yu, JJ Zhou, YC Kong, TS Chen, B Yan, YR Li, ZQ Ma, ... Chinese Physics B 30 (5), 058101, 2021 | 5 | 2021 |
| A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors Y Li, S Mao, Y Fu, R Xu, B Yan, Y Zhang, Y Xu International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 4 | 2021 |
| Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond A Hiraiwa, S Okubo, M Ogura, Y Fu, H Kawarada Journal of Applied Physics 132 (12), 2022 | 3 | 2022 |
| 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3 Gate Insulator Y Fu, Y Chang, X Zhu, A Hiraiwa, R Xu, Y Xu, H Kawarada 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 2 | 2022 |
| Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel K Ota, Y Fu, K Narita, C Wakabayashi, A Hiraiwa, T Fujishima, ... Carbon 213, 118099, 2023 | 1 | 2023 |
| Characterization of Current Collapse and Enhancement of Hydrogen-Terminated Diamond MOSFET Due to Long-Term Trapping Effects Y Jia, Y Xu, X Yu, Z Chen, Y Fu, J Zhou, Y Kong, T Chen, WB Lu IEEE Transactions on Electron Devices, 2023 | | 2023 |
Hiroshi KAWARADAWaseda UniversityVerified email at waseda.jp
Hiroshi KAWARADAWaseda UniversityVerified email at waseda.jp