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Burak GŁneş
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Fast Unveiling of Tmax in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model
H Kocer, Y Durna, B Gunes, G Tendurus, B Butun, E Ozbay
IEEE Transactions on Electron Devices 69 (5), 2319-2324, 2022
42022
Microheater-Integrated Spectrally Selective Multiband Mid-Infrared Nanoemitter for On-Chip Optical Multigas Sensing
Z Rahimian Omam, A Ghobadi, B Khalichi, B Güneş, E Ozbay
ACS Applied Nano Materials 6 (22), 20588-20600, 2023
32023
Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer
B GŁneş, A Ghobadi, O Odabasi, B BŁtŁn, E ÷zbay
Semiconductor Science and Technology 38 (6), 065002, 2023
12023
A comprehensive analysis of GaN HEMTs: electro-mechanical behavior, defect generation, and drain LAG reduction with HfO2 layers
B GŁneş
Bilkent University, 0
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Articles 1–4