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Fernando José da Costa
Fernando José da Costa
Centro Universitário FEI
Verified email at fei.edu.br
Title
Cited by
Cited by
Year
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors
NG Junior, FJ Costa, R Trevisoli, S Barraud, RT Doria
Solid-State Electronics 186, 108097, 2021
62021
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
FJ Costa, R Trevisoli, RT Doria
Solid-State Electronics 185, 108073, 2021
62021
Analysis of the substrate bias effect on the thermal properties of SOI UTBB transistors
FJ Costa, MA Pavanello, R Trevisoli, RT Doria
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017
62017
UTBB thermal coupling analysis in technological node level
FJ Costa, RT Doria, RT Doria
Journal of Integrated Circuits and Systems 15 (2), 1-5, 2020
52020
Analysis of the Output Conductance Degradation With the Substrate Bias in SOI UTB and UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2018
42018
Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019
22019
Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
IEEE Journal of the Electron Devices Society, 2023
12023
Ultra-low-power diodes composed by SOI UTBB transistors
FJ Costa, R Trevisoli, RT Doria
2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022
12022
SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes
FJ Costa, R Trevisoli, RT Doria
2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), 1-4, 2022
12022
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
FJ Costa, RT Doria, RT Doria
Journal of Integrated Circuits and Systems 15 (1), 1-6, 2020
12020
Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements
FJ Costa, A Zeinati, R Trevisoli, D Misra, RT Doria
2023 37th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2023
2023
Standard MOS Diodes Composed by SOI UTBB Transistors
FJ Costa, R Trevisoli, CE Capovilla, RT Doria
2022 36th Symposium on Microelectronics Technology (SBMICRO), 1-4, 2022
2022
Thermal Cross-Coupling Effects Analysis in UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
2020
Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors
FJ Costa, R Trevisoli, M de Souza, RT Doria
2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020
2020
Behavior of the Output Conductance with Respect to Temperature Variation
RTD F. J. Costa, R. Trevisoli
Seminatec 2019 - XIV Workshop on semiconductors and micro & nano technology …, 2019
2019
Estudo do efeito de autoaquecimento em transistores SOI-MOSFET fabricados em tecnologia de camadas ultra finas (UTB e UTBB)
FJ Costa
Centro Universitário FEI, São Bernardo do Campo, 2018
2018
Analysis of Thermal Resistance with BOX Thinning in UTB SOI MOSFETs
RTD F. J. Costa, R. Trevisoli
Seminatec 2017 - XII Workshop on semiconductions and micro & nano technology, 2017
2017
Capacitive Couplings in SOI UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
Proceedings of XV Workshop on Semiconductors and Micro & Nano Technology …, 0
Analysis of Thermal Resistance with BOX Thinning in UTB SOI MOSFETs
FJ Costa, R Trevisoli, RT Doria
Behaviour of the Output Conductance Due to Self-Heating Effect in SOI UTB and UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
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