| Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors S Kim, H Park, S Choo, S Baek, Y Kwon, N Liu, JY Yang, CW Yang, G Yoo, ... Communications Materials 1 (1), 86, 2020 | 29 | 2020 |
| Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs YJ Jeong, JY Yang, CH Lee, R Park, G Lee, RBK Chung, G Yoo Applied Surface Science 558, 149936, 2021 | 17 | 2021 |
| Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control JY Yang, MJ Yeom, Y Park, J Heo, G Yoo Advanced Electronic Materials 7 (8), 2100306, 2021 | 16 | 2021 |
| Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer JY Yang, M Park, MJ Yeom, Y Baek, SC Yoon, YJ Jeong, SY Oh, K Lee, ... ACS nano 17 (8), 7695-7704, 2023 | 15 | 2023 |
| Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors JY Yang, J Ma, CH Lee, G Yoo IEEE Transactions on Electron Devices 68 (3), 1011-1015, 2021 | 15 | 2021 |
| Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy YJ Jeong, JH Park, MJ Yeom, I Kang, JY Yang, HY Kim, DW Jeon, G Yoo Applied Physics Express 15 (7), 074001, 2022 | 12 | 2022 |
| ALD grown polycrystalline HfO2 dielectric layer on (− 2 0 1) β-Ga2O3 for MOS capacitors JY Yang, J Ma, G Yoo Results in Physics 17, 103119, 2020 | 10 | 2020 |
| Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure JY Yang, MJ Yeom, J Lee, K Lee, C Park, J Heo, G Yoo Advanced Electronic Materials 8 (9), 2101406, 2022 | 9 | 2022 |
| Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors HY Kang, MJ Yeom, JY Yang, Y Choi, J Lee, C Park, G Yoo, RBK Chung Materials Today Physics 31, 101002, 2023 | 8 | 2023 |
| Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric MJ Yeom, JY Yang, CH Lee, J Heo, RBK Chung, G Yoo Micromachines 12 (12), 1441, 2021 | 6 | 2021 |
| Graded crystalline HfO₂ gate dielectric layer for high-k/Ge MOS gate stack CH Lee, JY Yang, J Heo, G Yoo IEEE Journal of the Electron Devices Society 9, 295-299, 2021 | 6 | 2021 |
| Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric JY Yang, SY Oh, MJ Yeom, S Kim, G Lee, K Lee, S Kim, G Yoo IEEE Electron Device Letters, 2023 | 5 | 2023 |
| Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study TH Park, JY Yang, J Ma, G Yoo Journal of the Korean Physical Society 77, 317-322, 2020 | 4 | 2020 |
| An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT M Park, JY Yang, MJ Yeom, B Bae, Y Baek, G Yoo, K Lee Science advances 9 (38), eadh9889, 2023 | 2 | 2023 |
| Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors J Ji, JY Yang, S Lee, S Kim, MJ Yeom, G Lee, H Shin, SH Bae, JH Ahn, ... Communications Engineering 3 (1), 15, 2024 | 1 | 2024 |
| Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors Y Baek, B Bae, J Yang, D Lee, HS Lee, M Park, T Kim, S Kim, BI Park, ... Advanced Electronic Materials 9 (11), 2300303, 2023 | 1 | 2023 |
| Near‐sensor computing‐assisted simultaneous viral antigen and antibody detection via integrated label‐free biosensors with microfluidics B Bae, Y Baek, J Yang, H Lee, CSS Sonnadara, S Jung, M Park, D Lee, ... InfoMat 5 (10), e12471, 2023 | 1 | 2023 |
| A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors YJ Jeong, CH Lee, MJ Yeom, JY Yang, G Yoo physica status solidi (a) 220 (5), 2200596, 2023 | 1 | 2023 |
| Low Subthreshold Swing AlGaN MIS-GaN HEMT with Rapid Thermal Annealed HfO₂ Gate Dielectric MJ Yeom, JY Yang, SH Kim, GW Yoo 대한전자공학회 학술대회, 274-276, 2021 | | 2021 |
| Enhancement-mode β-Ga₂O₃ MOSFET with Ferroelectric α-In₂Se₃ Hetero-Gate Structure JY Yang, MJ Yeom, G Yoo 대한전자공학회 학술대회, 270-273, 2021 | | 2021 |
