| Three-dimensional graphene field-effect transistors as high-performance photodetectors T Deng, Z Zhang, Y Liu, Y Wang, F Su, S Li, Y Zhang, H Li, H Chen, ... Nano letters 19 (3), 1494-1503, 2019 | 131 | 2019 |
| FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2 Z Zhang, G Xu, Q Zhang, Z Hou, J Li, Z Kong, Y Zhang, J Xiang, Q Xu, ... IEEE Electron Device Letters 40 (3), 367-370, 2019 | 72 | 2019 |
| Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer Y Pan, K Jia, K Huang, Z Wu, G Bai, J Yu, Z Zhang, Q Zhang, H Yin Nanotechnology 30 (9), 095202, 2019 | 56 | 2019 |
| Optimization of structure and electrical characteristics for four-layer vertically-stacked horizontal gate-all-around Si nanosheets devices Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang, J Yao, Z Zhang, J Xiang, ... Nanomaterials 11 (3), 646, 2021 | 38 | 2021 |
| Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers F Su, Z Zhang, S Li, P Li, T Deng Applied Surface Science 459, 164-170, 2018 | 24 | 2018 |
| O2 plasma treated biosensor for enhancing detection sensitivity of sulfadiazine in a high-к HfO2 coated silicon nanowire array N Zhang, Z Zhang, Q Zhang, Q Wei, J Zhang, S Tang, C Lv, Y Wang, ... Sensors and Actuators B: Chemical 306, 127464, 2020 | 21 | 2020 |
| Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2 F Zhang, ZD Luo, Q Yang, J Zhou, J Wang, Z Zhang, Q Fan, Y Peng, Z Wu, ... ACS Applied Materials & Interfaces 14 (8), 11028-11037, 2022 | 17 | 2022 |
| Cryogenic transport characteristics of P-type gate-all-around silicon nanowire MOSFETs J Gu, Q Zhang, Z Wu, J Yao, Z Zhang, X Zhu, G Wang, J Li, Y Zhang, ... Nanomaterials 11 (2), 309, 2021 | 17 | 2021 |
| Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate Y Pan, H Yin, K Huang, Z Zhang, Q Zhang, K Jia, Z Wu, K Luo, J Yu, J Li, ... IEEE Journal of the Electron Devices Society 7, 483-488, 2019 | 17 | 2019 |
| Si nanowire biosensors using a FinFET fabrication process for real time monitoring cellular ion actitivies Q Zhang, H Tu, H Yin, F Wei, H Zhao, C Xue, Q Wei, Z Zhang, X Zhang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 29.6. 1-29.6. 4, 2018 | 17 | 2018 |
| Narrow sub-fin technique for suppressing parasitic-channel effect in stacked nanosheet transistors J Gu, Q Zhang, Z Wu, Y Luo, L Cao, Y Cai, J Yao, Z Zhang, G Xu, H Yin, ... IEEE Journal of the Electron Devices Society 10, 35-39, 2021 | 16 | 2021 |
| Fabrication of low cost and low temperature poly-silicon nanowire sensor arrays for monolithic three-dimensional integrated circuits applications S Tang, J Yan, J Zhang, S Wei, Q Zhang, J Li, M Fang, S Zhang, E Xiong, ... Nanomaterials 10 (12), 2488, 2020 | 15 | 2020 |
| A polarization-switching, charge-trapping, modulated arithmetic logic unit for in-memory computing based on ferroelectric fin field-effect transistors Z Zhang, Y Luo, Y Cui, H Yang, Q Zhang, G Xu, Z Wu, J Xiang, Q Liu, ... ACS Applied Materials & Interfaces 14 (5), 6967-6976, 2022 | 14 | 2022 |
| A Gd-doped HfO 2 single film for a charge trapping memory device with a large memory window under a low voltage Y Shen, Z Zhang, Q Zhang, F Wei, H Yin, Q Wei, K Men RSC advances 10 (13), 7812-7816, 2020 | 14 | 2020 |
| Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs L Zhou, Q Zhang, H Yang, Z Ji, Z Zhang, Q Liu, H Xu, B Tang, E Simoen, ... IEEE Electron Device Letters 41 (7), 965-968, 2020 | 12 | 2020 |
| Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays Q Zhang, H Tu, H Yin, F Wei, J Li, L Meng, Z Zhang, J Yan, H Zhao, T Ma, ... Microelectronic Engineering 198, 48-54, 2018 | 12 | 2018 |
| Layout optimization of complementary FET 6T-SRAM cell based on a universal methodology using sensitivity with respect to parasitic-and-values Y Luo, L Cao, Q Zhang, Y Cao, Z Zhang, J Yao, G Yan, X Zhang, W Gan, ... IEEE Transactions on Electron Devices 69 (11), 6095-6101, 2022 | 11 | 2022 |
| Influence of rapid thermal annealing on Ge-Si interdiffusion in epitaxial multilayer Ge0. 3Si0. 7/Si superlattices with various GeSi thicknesses Q Zhang, H Tu, S Gu, Z Zhang, G Wang, F Wei, T Ma, H Zhao, Q Wei, ... ECS Journal of Solid State Science and Technology 7 (11), P671, 2018 | 11 | 2018 |
| Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films Y Cai, Q Zhang, Z Zhang, G Xu, Z Wu, J Gu, J Li, J Xiang, H Yin Applied Sciences 11 (9), 4295, 2021 | 10 | 2021 |
| Ultradense one-memristor ternary-content-addressable memory based on ferroelectric diodes Z Zhang, F Zhang, Y Zhang, G Xu, Z Wu, Q Zhang, Y Li, H Yin, J Luo, ... IEEE Electron Device Letters 44 (1), 64-67, 2022 | 8 | 2022 |
