| Dispersive optical bistability in stratified structures J Danckaert, K Fobelets, I Veretennicoff, G Vitrant, R Reinisch Physical Review B 44 (15), 8214, 1991 | 96 | 1991 |
| A GaAs pressure sensor based on resonant tunnelling diodes K Fobelets, R Vounckx, G Borghs Journal of Micromechanics and Microengineering 4 (3), 123, 1994 | 62 | 1994 |
| Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance SH Olsen, AG O'Neill, DJ Norris, AG Cullis, NJ Woods, J Zhang, ... Semiconductor science and technology 17 (7), 655, 2002 | 50 | 2002 |
| Capacitances in double-barrier tunneling structures J Genoe, C Van Hoof, W Van Roy, JH Smet, K Fobelets, RP Mertens, ... IEEE transactions on electron devices 38 (9), 2006-2012, 1991 | 47 | 1991 |
| High density micro-pyramids with silicon nanowire array for photovoltaic applications T Rahman, M Navarro-Cía, K Fobelets Nanotechnology 25 (48), 485202, 2014 | 45 | 2014 |
| Two-sided silicon nanowire array/bulk thermoelectric power generator B Xu, W Khouri, K Fobelets IEEE electron device letters 35 (5), 596-598, 2014 | 39 | 2014 |
| In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures C Gatzke, SJ Webb, K Fobelets, RA Stradling Semiconductor science and technology 13 (4), 399, 1998 | 39 | 1998 |
| MOS gated Si: SiGe quantum wells formed by anodic oxidation JC Yeoh, PW Green, TJ Thornton, S Kaya, K Fobelets, JM Fernández Semiconductor science and technology 13 (12), 1442, 1998 | 34 | 1998 |
| Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators B Xu, K Fobelets Journal of Applied Physics 115 (21), 2014 | 25 | 2014 |
| Thermoelectric Performance of Nanowire Arrays B Xu, C Li, K Thielemans, M Myronov, K Fobelets IEEE Transactions on Electron Devices 59 (12), 3193-3198, 2012 | 25 | 2012 |
| Mechanisms for enhancement of sensing performance in CMOS ISFET arrays using reactive ion etching N Moser, C Panteli, K Fobelets, P Georgiou Sensors and Actuators B: Chemical 292, 297-307, 2019 | 24 | 2019 |
| Microwave oscillator, an antenna therefor and methods of manufacture S Brebels, K Fobelets, P Pieters, E Beyne, G Borghs US Patent 5,675,295, 1997 | 24 | 1997 |
| pnp resonant tunneling light emitting transistor J Genoe, C Van Hoof, K Fobelets, R Mertens, G Borghs Applied physics letters 61 (9), 1051-1053, 1992 | 24 | 1992 |
| Terahertz imaging using strained-Si MODFETs as sensors YM Meziani, E García-García, JE Velázquez-Pérez, D Coquillat, ... Solid-State Electronics 83, 113-117, 2013 | 22 | 2013 |
| Field-effect transistors using silicon nanowires prepared by electroless chemical etching M Zaremba-Tymieniecki, C Li, K Fobelets, ZAK Durrani IEEE electron device letters 31 (8), 860-862, 2010 | 22 | 2010 |
| In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes J Genoe, K Fobelets, C Van Hoof, G Borghs Physical Review B 52 (19), 14025, 1995 | 22 | 1995 |
| Characterization of knitted coils for e-textiles K Fobelets, K Thielemans, A Mathivanan, C Papavassiliou IEEE Sensors Journal 19 (18), 7835-7840, 2019 | 21 | 2019 |
| A review of thermal rectification in solid-state devices FK Malik, K Fobelets Journal of Semiconductors 43 (10), 103101, 2022 | 20 | 2022 |
| Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect IV Minin, OV Minin, J Salvador-Sánchez, JA Delgado-Notario, ... Optics letters 46 (13), 3061-3064, 2021 | 19 | 2021 |
| Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si: SiGe depletion-mode n-MODFET V Gaspari, K Fobelets, JE Velazquez-Perez, R Ferguson, K Michelakis, ... Applied surface science 224 (1-4), 390-393, 2004 | 19 | 2004 |
