Deep Jariwala
Deep Jariwala
University of Pennsylvania, Caltech, Northwestern University
在 seas.upenn.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam
ACS Nano 8 (2), 1102–1120, 2014
21282014
Atomic layers of hybridized boron nitride and graphene domains
L Ci, L Song, C Jin, D Jariwala, D Wu, Y Li, A Srivastava, ZF Wang, K Storr, ...
Nature materials 9 (5), 430-435, 2010
20262010
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ...
Nano letters 14 (12), 6964–6970, 2014
11612014
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam
Chemical Society Reviews 42 (7), 2824-2860, 2013
10522013
Mixed-dimensional van der Waals heterostructures
D Jariwala, TJ Marks, MC Hersam
Nature Materials 16, 170-181, 2017
8422017
Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry
CR Ryder, JD Wood, SA Wells, Y Yang, D Jariwala, TJ Marks, GC Schatz, ...
Nature chemistry 8 (6), 597-602, 2016
5362016
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS 2
VK Sangwan, D Jariwala, IS Kim, KS Chen, TJ Marks, LJ Lauhon, ...
Nature nanotechnology 10 (5), 403-406, 2015
4292015
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
D Jariwala, VK Sangwan, DJ Late, JE Johns, VP Dravid, TJ Marks, ...
Applied Physics Letters 102 (17), 173107, 2013
3782013
Gate-tunable carbon nanotube-MoS2 heterojunction pn diode
D Jariwala, VK Sangwan, CC Wu, PL Prabhumirashi, ML Geier, TJ Marks, ...
Proceedings of the National Academy of Sciences of U.S.A 110 (45), 18076–18080, 2013
3502013
Novel liquid precursor-based facile synthesis of large-area continuous, single, and few-layer graphene films
A Srivastava, C Galande, L Ci, L Song, C Rai, D Jariwala, KF Kelly, ...
Chemistry of Materials 22 (11), 3457-3461, 2010
3002010
Hybrid, Gate-Tunable, van der Waals pn Heterojunctions from Pentacene and MoS2
D Jariwala, S Howell, KS Chen, J Kang, VK Sangwan, SA Filippone, ...
Nano letters 16 (1), 497–503, 2016
2622016
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
IS Kim, VK Sangwan, D Jariwala, JD Wood, S Park, KS Chen, F Shi, ...
ACS nano 8 (10), 10551-10558, 2014
2362014
Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
VK Sangwan, HN Arnold, D Jariwala, TJ Marks, LJ Lauhon, MC Hersam
Nano letters 13 (9), 4351-4355, 2013
2202013
Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
CC Wu, D Jariwala, VK Sangwan, TJ Marks, MC Hersam, LJ Lauhon
J. Phys. Chem. Lett., 4 (15), 2508–2513, 2013
2002013
Graphene shape control by multistage cutting and transfer
L Ci, L Song, D Jariwala, AL Elías, W Gao, M Terrones, PM Ajayan
Advanced Materials 21 (44), 4487-4491, 2009
1802009
Van der Waals materials for atomically-thin photovoltaics: promise and outlook
D Jariwala, AR Davoyan, J Wong, HA Atwater
Acs Photonics 4 (12), 2962-2970, 2017
1482017
High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures
J Wong, D Jariwala, G Tagliabue, K Tat, AR Davoyan, MC Sherrott, ...
ACS nano 11 (7), 7230–7240, 2017
1282017
Investigation of band-offsets at monolayer-multilayer MoS2 junctions by scanning photocurrent microscopy
SL Howell, D Jariwala, CC Wu, KS Chen, VK Sangwan, J Kang, TJ Marks, ...
Nano Letters 15 (4), 2278–2284, 2015
1272015
Near-Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics
D Jariwala, AR Davoyan, G Tagliabue, MC Sherrott, J Wong, HA Atwater
Nano Letters 16 (9), 5482–5487, 2016
1112016
Probing out-of-plane charge transport in black phosphorus with graphene-contacted vertical field-effect transistors
J Kang, D Jariwala, CR Ryder, SA Wells, Y Choi, E Hwang, JH Cho, ...
Nano letters 16 (4), 2580-2585, 2016
1092016
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