Tian Shen
Cited by
Cited by
Compound Semiconductor Devices-Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al2O3 as Gate Dielectric
Y Xuan, YQ Wu, HC Lin, T Shen, PD Ye
IEEE Electron Device Letters 28 (11), 935-938, 2007
Top-gated graphene field-effect-transistors formed by decomposition of SiC
YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ...
Applied Physics Letters 92, 092102, 2008
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye
Applied Physics Letters 92, 013101, 2008
Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric
Y Xuan, YQ Wu, HC Lin, T Shen, PD Ye
Electron Device Letters, IEEE 28 (11), 935-938, 2007
Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped : Evidence for Layered Transport of Bulk Carriers
H Cao, J Tian, I Miotkowski, T Shen, J Hu, S Qiao, YP Chen
Physical Review Letters 108 (21), 216803, 2012
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 022105, 2012
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye
Applied Physics Letters 95, 172105, 2009
Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ...
Applied Physics Letters 102 (18), 183110, 2013
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics
Y Xuan, YQ Wu, T Shen, T Yang, PD Ye
Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 637-640, 2007
Magnetoconductance oscillations in graphene antidot arrays
T Shen, YQ Wu, MA Capano, LP Rokhinson, LW Engel, PD Ye
Applied Physics Letters 93 (12), 122102, 2008
Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited AlO∕ GaN metal-oxide-semiconductor structures
YQ Wu, T Shen, PD Ye, GD Wilk
Applied physics letters 90, 143504, 2007
First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching
YQ Wu, RS Wang, T Shen, JJ Gu, PD Ye
Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited AlO dielectrics
YQ Wu, Y Xuan, T Shen, PD Ye, Z Cheng, A Lochtefeld
Applied physics letters 91, 022108, 2007
Topological insulator based spin valve devices: Evidence for spin polarized transport of spin-momentum-locked topological surface states
J Tian, I Childres, H Cao, T Shen, I Miotkowski, YP Chen
Solid State Communications 191, 1-5, 2014
High-performance surface channel In-rich In0. 75Ga0. 25As MOSFETs with ALD high-k as gate dielectric
Y Xuan, T Shen, M Xu, YQ Wu, PD Ye
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO∕ AlO nanolaminate gate dielectric
T Yang, Y Xuan, D Zemlyanov, T Shen, YQ Wu, JM Woodall, PD Ye, ...
Applied Physics Letters 91, 142122, 2007
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric
HC Lin, T Yang, H Sharifi, SK Kim, Y Xuan, T Shen, S Mohammadi, PD Ye
Applied Physics Letters 91 (21), 212101-212101-3, 2007
Metal-oxide-semiconductor field-effect transistors on GaAs (111) A surface with atomic-layer-deposited AlO as gate dielectrics
M Xu, YQ Wu, O Koybasi, T Shen, PD Ye
Applied Physics Letters 94, 212104, 2009
Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
Y Xuan, PD Ye, T Shen
Applied Physics Letters 91 (23), 232107, 2007
A 7nm CMOS technology platform for mobile and high performance compute application
S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017
The system can't perform the operation now. Try again later.
Articles 1–20