Xichao Zhang
Xichao Zhang
The Chinese University of Hong Kong, Shenzhen
Verified email at cuhk.edu.cn - Homepage
TitleCited byYear
Magnetic skyrmion logic gates: conversion, duplication and merging of skyrmions
X Zhang, M Ezawa, Y Zhou
Scientific Reports 5, 9400, 2015
3712015
Direct Observation of the Skyrmion Hall Effect
W Jiang, X Zhang, G Yu, W Zhang, X Wang, M Benjamin Jungfleisch, ...
Nature Physics 13, 162, 2016
3602016
Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory
X Zhang, GP Zhao, H Fangohr, JP Liu, WX Xia, J Xia, FJ Morvan
Scientific Reports 5, 7643, 2015
2102015
Magnetic bilayer-skyrmions without skyrmion Hall effect
X Zhang, Y Zhou, M Ezawa
Nature Communications 7, 10293, 2016
1892016
Antiferromagnetic Skyrmion: Stability, Creation and Manipulation
X Zhang, Y Zhou, M Ezawa
Scientific Reports 6, 24795, 2016
1532016
Skyrmion-Electronics: An Overview and Outlook
W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Proceedings of the IEEE 104 (10), 2040, 2016
1342016
Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
X Zhang, Y Zhou, M Ezawa, GP Zhao, W Zhao
Scientific Reports 5, 11369, 2015
1342015
Current-driven dynamics and inhibition of the skyrmion Hall effect of ferrimagnetic skyrmions in GdFeCo films
S Woo, KM Song, X Zhang, Y Zhou, M Ezawa, X Liu, S Finizio, J Raabe, ...
Nature Communications 9 (1), 959, 2018
982018
Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory
W Kang, Y Huang, C Zheng, W Lv, N Lei, Y Zhang, X Zhang, Y Zhou, ...
Scientific Reports 6, 23164, 2016
942016
Magnetic skyrmion-based synaptic devices
Y Huang, W Kang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (8), 08LT02, 2017
852017
All-magnetic control of skyrmions in nanowires by a spin wave
X Zhang, M Ezawa, D Xiao, GP Zhao, Y Liu, Y Zhou
Nanotechnology 26 (22), 225701, 2015
622015
Magnetic skyrmion-based artificial neuron device
S Li, W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28, 31LT01, 2017
542017
Skyrmion dynamics in a frustrated ferromagnetic film and current-induced helicity locking-unlocking transition
X Zhang, J Xia, Y Zhou, X Liu, H Zhang, M Ezawa
Nature Communications 8, 1717, 2017
482017
Control and manipulation of a magnetic skyrmionium in nanostructures
X Zhang, J Xia, Y Zhou, D Wang, X Liu, W Zhao, M Ezawa
Physical Review B 94 (9), 094420, 2016
482016
Complementary Skyrmion Racetrack Memory with Voltage Manipulation
W Kang, C Zheng, Y Huang, X Zhang, Y Zhou, W Lv, W Zhao
IEEE Electron Device Letters 37, 924, 2016
432016
An Improved Racetrack Structure for Transporting a Skyrmion
P Lai, GP Zhao, H Tang, N Ran, SQ Wu, J Xia, X Zhang, Y Zhou
Scientific Reports 7, 45330, 2017
292017
Thermally stable magnetic skyrmions in multilayer synthetic antiferromagnetic racetracks
X Zhang, M Ezawa, Y Zhou
Physical Review B 94 (6), 064406, 2016
272016
High-topological-number magnetic skyrmions and topologically protected dissipative structure
X Zhang, Y Zhou, M Ezawa
Physical Review B 93 (2), 024415, 2016
272016
Deterministic creation and deletion of a single magnetic skyrmion observed by direct time-resolved X-ray microscopy
S Woo, KM Song, X Zhang, M Ezawa, Y Zhou, X Liu, M Weigand, S Finizio, ...
Nature Electronics 1 (5), 288, 2018
252018
Skyrmions in magnetic tunnel junctions
X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ...
ACS applied materials & interfaces 10 (19), 16887-16892, 2018
242018
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Articles 1–20