| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ... 2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012 | 103 | 2012 |
| High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper B Greene, Q Liang, K Amarnath, Y Wang, J Schaeffer, M Cai, Y Liang, ... 2009 Symposium on VLSI Technology, 140-141, 2009 | 60 | 2009 |
| Positive Bias Temperature Instability Effects in nMOSFETs With Gate Stacks DP Ioannou, S Mittl, G La Rosa IEEE Transactions on Device and Materials Reliability 9 (2), 128-134, 2009 | 58 | 2009 |
| Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness M Dai, Y Wang, J Shepard, J Liu, M Brodsky, S Siddiqui, P Ronsheim, ... Journal of Applied Physics 113 (4), 2013 | 35 | 2013 |
| Bias temperature instability in High-κ/metal gate transistors-Gate stack scaling trends S Krishnan, V Narayanan, E Cartier, D Ioannou, K Zhao, T Ando, U Kwon, ... 2012 IEEE international reliability physics symposium (IRPS), 5A. 1.1-5A. 1.6, 2012 | 35 | 2012 |
| PBTI response to interfacial layer thickness variation in Hf-based HKMG nFETs DP Ioannou, E Cartier, Y Wang, S Mittl 2010 IEEE International Reliability Physics Symposium, 1044-1048, 2010 | 27 | 2010 |
| HKMG CMOS technology qualification: The PBTI reliability challenge DP Ioannou Microelectronics Reliability 54 (8), 1489-1499, 2014 | 25 | 2014 |
| Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications C Kothandaraman, X Chen, D Moy, D Lea, S Rosenblatt, F Khan, D Leu, ... 2015 IEEE International Reliability Physics Symposium, MY. 2.1-MY. 2.4, 2015 | 24 | 2015 |
| Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors DP Ioannou, DE Ioannou Solid-state electronics 51 (2), 268-277, 2007 | 16 | 2007 |
| Burn-in stress induced BTI degradation and post-burn-in high temperature anneal (Bake) effects in advanced HKMG and oxynitride based CMOS ring oscillators DP Ioannou, S Mittl, D Brochu 2012 IEEE international reliability physics symposium (IRPS), 5C. 2.1-5C. 2.5, 2012 | 15 | 2012 |
| A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS DP Ioannou, K Zhao, A Bansal, B Linder, R Bolam, E Cartier, JJ Kim, ... 2011 International Reliability Physics Symposium, CR. 1.1-CR. 1.4, 2011 | 15 | 2011 |
| Low voltage/low power sub 50 nm double gate SOI ratioed logic S Mitra, A Salman, DP Ioannou, C Tretz, DE Ioannou 2003 IEEE International Conference on SOI, 177-178, 2003 | 12 | 2003 |
| Positive bias temperature instability effects in advanced high-k/metal gate NMOSFETs DP Ioannou, S Mittl, G LaRosa 2008 IEEE International Integrated Reliability Workshop Final Report, 55-57, 2008 | 11 | 2008 |
| Double gate (DG)-SOI ratioed logic with symmetric DG load––a novel approach for sub 50 nm low-voltage/low-power circuit design S Mitra, A Salman, DP Ioannou, C Tretz, DE Ioannou Solid-State Electronics 48 (10-11), 1727-1732, 2004 | 10 | 2004 |
| Reliability characterization of 32nm High-K Metal Gate SOI technology with embedded DRAM S Mittl, A Swift, E Wu, D Ioannou, F Chen, G Massey, N Rahim, M Hauser, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 6A. 5.1-6A. 5.7, 2012 | 7 | 2012 |
| Influence of charge trapping on failure detection and its distributions for nFET high-k stacks EY Wu, DP Ioannou, CB LaRow IEDM 18, 1-18.2, 2011 | 7 | 2011 |
| Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs DP Ioannou, R Mishra, DE Ioannou, ST Liu, HL Hughes Solid-state electronics 50 (6), 929-934, 2006 | 7 | 2006 |
| Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs DP Ioannou, Y Tan, R Logan, K Bandy, R Achanta, PC Wang, D Brochu, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 2-1-P-TX …, 2018 | 6 | 2018 |
| Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability MG Farooq, G La Rosa, F Chen, P Periasamy, TL Graves-Abe, ... 2015 IEEE International Reliability Physics Symposium, 4C. 1.1-4C. 1.8, 2015 | 6 | 2015 |
