| Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors X Tang, KH Li, Y Zhao, Y Sui, H Liang, Z Liu, CH Liao, R Lin, FS Alqatari, ... ACS Applied Materials & Interfaces, 2021 | 33 | 2021 |
| Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ... Applied Physics Letters 122 (12), 2023 | 18 | 2023 |
| Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations X Tang, KH Li, CH Liao, D Zheng, C Liu, R Lin, N Xiao, S Krishna, ... Journal of Materials Chemistry C 9 (44), 15868-15876, 2021 | 12 | 2021 |
| Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LED Z Liu, Y Lu, Y Wang, R Lin, C Xiong, XH Li IEEE Photonics Journal, 2021 | 11 | 2021 |
| Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures C Wang, F AlQatari, V Khandelwal, R Lin, X Li Applied Surface Science 608, 155099, 2023 | 10 | 2023 |
| A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C, 2022 | 10 | 2022 |
| BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer W Gu, Y Lu, R Lin, W Guo, Z Zhang, JH Ryou, J Yan, J Wang, J Li, X Li Journal of Physics D: Applied Physics 54 (17), 175104, 2021 | 10 | 2021 |
| BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures R Lin, X Liu, K Liu, Y Lu, X Liu, X Li Journal of Physics D: Applied Physics 53 (48), 48LT01, 2020 | 8 | 2020 |
| High-performance van der Waals antiferroelectric CuCrP2S6-based memristors Y Ma, Y Yan, L Luo, S Pazos, C Zhang, X Lv, M Chen, C Liu, Y Wang, ... Nature Communications 14 (1), 7891, 2023 | 6 | 2023 |
| Low resistance asymmetric III-Nitride tunnel junctions designed by machine learning R Lin, P Han, Y Wang, R Lin, Y Lu, Z Liu, X Zhang, X Li Nanomaterials 11 (10), 2466, 2021 | 4 | 2021 |
| Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization M Shan, Y Zhang, M Tian, R Lin, J Jiang, Z Zheng, Y Zhao, Y Lu, Z Feng, ... ACS Photonics 8 (5), 1264-1270, 2021 | 4 | 2021 |
| Multi-modal preference alignment remedies regression of visual instruction tuning on language model S Li, R Lin, S Pei arXiv preprint arXiv:2402.10884, 2024 | 1 | 2024 |
| Correction: Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations X Tang, KH Li, CH Liao, D Zheng, C Liu, R Lin, N Xiao, S Krishna, ... Journal of Materials Chemistry C 9 (48), 17542-17542, 2021 | 1 | 2021 |
| Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source Z Liu, Y Lu, H Cao, RA Vazquez, R Lin, N Xiao, X Tang, M Nong, S Li, ... Micro and Nanostructures 187, 207755, 2024 | | 2024 |
| Wide Bandgap Semiconductor Device Design via Machine Learning R Lin King Abdullah University of Science and Technology, 2022 | | 2022 |
| 一种微机械剥离二维材料加工自动检索系统 林嵘宇， 张立源， 姜玄策 CN Patent 206,906,691 U, 2018 | | 2018 |
Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, KAUST, Saudi Arabia在 kaust.edu.sa 的電子郵件地址已通過驗證
