| Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 19 | 2022 |
| Full Front and Back Split CV characterization of CMOS devices from 14nm node FDSOI technology B Mohamad, G Ghibaudo, C Leroux, E Josse, G Reimbold 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2015 | 14 | 2015 |
| Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT PFPP Rocha, L Vauche, B Mohamad, W Vandendaele, E Martinez, ... Power Electronic Devices and Components 4, 100033, 2023 | 8 | 2023 |
| A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures C Piotrowicz, B Mohamad, B Rrustemi, N Malbert, MA Jaud, ... Solid-State Electronics 194, 108322, 2022 | 8 | 2022 |
| Determination of well flat band condition in thin film FDSOI transistors using CV measurement for accurate parameter extraction B Mohamad, C Leroux, G Reimbold, G Ghibaudo Solid-State Electronics 139, 88-93, 2018 | 4 | 2018 |
| Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations C Piotrowic, B Mohamad, PFPP Rocha, N Malbert, S Ruel, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 3 | 2023 |
| Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs C Leurquin, W Vandendaele, R Gwoziecki, B Mohamad, G Despesse, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 3 | 2023 |
| Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG) C Piotrowicz, B Mohamad, N Malbert, MA Jaud, W Vandendaele, ... Solid-State Electronics 201, 108594, 2023 | 3 | 2023 |
| Role of free holes in nBTI degradation in GaN-on-Si MOS-channel HEMTs W Vandendaele, MA Jaud, AG Viey, B Mohamad, C Le Royer, L Vauche, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 3 | 2022 |
| Electrical characterization of fully depleted SOI devices based on CV measurements B Mohamad Université Grenoble Alpes (ComUE), 2017 | 3 | 2017 |
| Reliable gate stack and substrate parameter extraction based on CV measurements for 14 nm node FDSOI technology B Mohamad, C Leroux, D Rideau, M Haond, G Reimbold, G Ghibaudo Solid-State Electronics 128, 10-16, 2017 | 3 | 2017 |
| Robust EOT and effective work function extraction for 14 nm node FDSOI technology B Mohamad, C Leroux, D Rideau, M Haond, G Reimbold, G Ghibaudo 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 3 | 2016 |
| Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities W Vandendaele, C Leurquin, R Lavieville, MA Jaud, AG Viey, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2023 | 2 | 2023 |
| Effect of doping on Al2O3/GaN MOS capacitance B Rrustemi, C Piotrowicz, MA Jaud, F Triozon, W Vandendaele, ... Solid-State Electronics 194, 108356, 2022 | 2 | 2022 |
| Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs P Kumar, C Leroux, B Mohamad, A Toffoli, G Romano, X Garros, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2B-2.1-2B-2.7, 2017 | 2 | 2017 |
| Post-deposition annealing challenges for ALD Al0. 5Si0. 5Ox/n-GaN MOS devices PFPP Rocha, L Vauche, M Bedjaoui, S Cadot, B Mohamad, ... Solid-State Electronics 209, 108780, 2023 | 1 | 2023 |
| Electronic device comprising transistors R Escoffier, B Mohamad US Patent App. 17/826,706, 2022 | 1 | 2022 |
| Recent advances in GaN power devices development at CEA-LETI R Gwoziecki, J Buckley, C Le Royer, L Vauche, B Mohamad, C Gillot, ... GaN Marathon, 2022 | 1 | 2022 |
| Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow PFPP Rocha, L Vauche, B Mohamad, W Vandendaele, E Martinez, ... GaN Marathon, 2022 | 1 | 2022 |
| Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs V Ackermann, B Mohamad, H El Rammouz, V Maurya, E Frayssinet, ... Electronics 13 (12), 2350, 2024 | | 2024 |
