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Andy Paul Chen
Andy Paul Chen
Research Fellow, Nanyang Technological University
Verified email at u.nus.edu
Title
Cited by
Cited by
Year
Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ...
Small 15 (24), 1901423, 2019
2962019
Designing carbon conductive filament memristor devices for memory and electronic synapse applications
Z Zhou, J Zhao, AP Chen, Y Pei, Z Xiao, G Wang, J Chen, G Fu, X Yan
Materials Horizons 7 (4), 1106-1114, 2020
622020
A carbon-based memristor design for associative learning activities and neuromorphic computing
Y Pei, Z Zhou, AP Chen, J Chen, X Yan
Nanoscale 12 (25), 13531-13539, 2020
532020
Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ...
Physical Review Letters 124, 217202, 2020
322020
Modulating multiferroic control of magnetocrystalline anisotropy using 5d transition metal capping layers
AP Chen, YP Feng
ACS Applied Materials & Interfaces 12 (22), 25383-25389, 2020
142020
Effect of Composition on the Magnetic Properties of the Free Layer in Double-Barrier Magnetic Tunnel Junctions
S Srivastava, AP Chen, T Dutta, R Ramaswamy, J Son, MSM Saifullah, ...
Physical Review Applied 10 (2), 024031, 2018
112018
Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions
AP Chen, JD Burton, EY Tsymbal, YP Feng, J Chen
Physical Review B 98 (4), 045129, 2018
102018
Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe2CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization
Y Liu, AP Chen, L Ren, Y Liu, S Srivastava, H Yang, YP Feng, KL Teo
ACS Applied Electronic Materials 1 (7), 1251-1260, 2019
72019
Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface
AP Chen, W Lin, J Chen, YP Feng
ACS Applied Materials & Interfaces 12 (39), 44317-44324, 2020
22020
Magnetism and Spin Transport at the Interface of Ferroelectric and Ferromagnetic Materials
AP Chen
PQDT-Global, 2018
12018
Electronic structure of grain boundaries containing reactive element segregants
AP Chen, AH Heuer, MW Finnis, WMC Foulkes
Physical Review Materials 6 (9), 093402, 2022
2022
Diffusion of oxygen in Mg-doped : The corundum conundrum explained
AP Chen, WMC Foulkes, AH Heuer, MW Finnis
Physical Review Materials 6 (6), 063404, 2022
2022
Comment on “Self-diffusion in high-purity α-Al2O3: Comparison of Ti-doped, Mg-doped and undoped single crystals” P. Fielitz, S. Ganschow, K. Klemens, and G. Borchardt, J. Eur …
AH Heuer, MW Finnis, WMC Foulkes, AP Chen
Journal of the European Ceramic Society 42 (4), 1829-1831, 2022
2022
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