| Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States GS Kim, SH Kim, J Park, KH Han, J Kim, HY Yu ACS nano 12 (6), 6292-6300, 2018 | 152 | 2018 |
| Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse SG Kim, SH Kim, J Park, GS Kim, JH Park, KC Saraswat, J Kim, HY Yu ACS nano 13 (9), 10294-10300, 2019 | 99 | 2019 |
| Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack GS Kim, SW Kim, SH Kim, J Park, Y Seo, BJ Cho, C Shin, JH Shim, HY Yu ACS Applied Materials & Interfaces 8 (51), 35419-35425, 2016 | 41 | 2016 |
| Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−xInterfacial Layer to Metal/Ge Contact GS Kim, JK Kim, SH Kim, J Jo, C Shin, JH Park, KC Saraswat, HY Yu IEEE Electron Device Letters 35 (11), 1076-1078, 2014 | 41 | 2014 |
| Hysteresis modulation on van der Waals‐based ferroelectric field‐effect transistor by interfacial passivation technique and its application in optic neural networks H Jeon, SG Kim, J Park, SH Kim, E Park, J Kim, HY Yu Small 16 (49), 2004371, 2020 | 34 | 2020 |
| Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic circuits JH Park, SH Kim, SG Kim, K Heo, HY Yu ACS applied materials & interfaces 11 (9), 9182-9189, 2019 | 32 | 2019 |
| Surface Passivation of Germanium Using SF6Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET GS Kim, SH Kim, JK Kim, C Shin, JH Park, KC Saraswat, BJ Cho, HY Yu IEEE Electron Device Letters 36 (8), 745-747, 2015 | 30 | 2015 |
| The effect of interfacial dipoles on the metal-double interlayers-semiconductor structure and their application in contact resistivity reduction SW Kim, SH Kim, GS Kim, C Choi, R Choi, HY Yu ACS Applied Materials & Interfaces 8 (51), 35614-35620, 2016 | 27 | 2016 |
| Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering T Kim, JK Kim, B Yoo, H Xu, S Yim, SH Kim, HY Yu, JK Jeong Journal of Materials Chemistry C 8 (1), 201-208, 2020 | 23 | 2020 |
| Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure SH Kim, KH Han, GS Kim, SG Kim, J Kim, HY Yu ACS applied materials & interfaces 11 (6), 6230-6237, 2019 | 19 | 2019 |
| Fermi-level unpinning using a Ge-passivated metal–interlayer–semiconductor structure for non-alloyed ohmic contact of high-electron-mobility transistors SH Kim, GS Kim, JK Kim, JH Park, C Shin, C Choi, HY Yu IEEE Electron Device Letters 36 (9), 884-886, 2015 | 17 | 2015 |
| An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement T Kim*, SH Kim*, JH Park, J Park, E Park, SG Kim, HY Yu Advanced Electronic Materials 7 (1), 2000410, 2021 | 16 | 2021 |
| Effect of hydrogen annealing on contact resistance reduction of metal–interlayer–n-germanium source/drain structure GS Kim, G Yoo, Y Seo, SH Kim, K Cho, BJ Cho, C Shin, JH Park, HY Yu IEEE Electron Device Letters 37 (6), 709-712, 2016 | 16 | 2016 |
| Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor DG Jin, SH Kim, SG Kim, J Park, E Park, HY Yu Small 17 (30), 2100242, 2021 | 15 | 2021 |
| Fermi-level unpinning technique with excellent thermal stability for n-type germanium GS Kim, SH Kim, TI Lee, BJ Cho, C Choi, C Shin, JH Shim, J Kim, HY Yu ACS applied materials & interfaces 9 (41), 35988-35997, 2017 | 15 | 2017 |
| Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment SH Kim, GS Kim, SW Kim, JK Kim, C Choi, JH Park, R Choi, HY Yu IEEE Electron Device Letters 37 (4), 373-376, 2016 | 14 | 2016 |
| Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors SG Kim, SH Kim, GS Kim, H Jeon, T Kim, HY Yu Advanced Science 8 (12), 2100208, 2021 | 12 | 2021 |
| Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO) DH Kang, ST Hong, A Oh, SH Kim, HY Yu, JH Park Materials Research Bulletin 82, 26-30, 2016 | 12 | 2016 |
| Enhancement of DRAM performance by adopting metal–interlayer–semiconductor source/drain contact structure on DRAM cell M Son, SG Jung, SH Kim, E Park, SH Lee, HY Yu IEEE Transactions on Electron Devices 68 (5), 2275-2280, 2021 | 7 | 2021 |
| Ultralow Schottky barrier height achieved by using molybdenum disulfide/dielectric stack for source/drain contact SH Kim, KH Han, E Park, SG Kim, HY Yu ACS applied materials & interfaces 11 (37), 34084-34090, 2019 | 7 | 2019 |
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr
