| Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy JH Sung, H Heo, S Si, YH Kim, HR Noh, K Song, J Kim, CS Lee, SY Seo, ... Nature nanotechnology 12 (11), 1064-1070, 2017 | 234 | 2017 |
| Heteroepitaxial van der Waals semiconductor superlattices G Jin*, CS Lee*, OFN Okello, SH Lee, MY Park, S Cha, SY Seo, G Moon, ... Nature Nanotechnology 16 (10), 1092-1098, 2021 | 59 | 2021 |
| Epitaxial van der Waals Contacts between Transition-metal Dichalcogenide Monolayer Polymorphs CS Lee*, SJ Oh*, H Heo, SY Seo, J Kim, YH Kim, D Kim, OFN Okello, ... Nano Letters 19 (3), 1814-1820, 2019 | 44 | 2019 |
| Directly assembled 3D molybdenum disulfide on silicon wafer for efficient photoelectrochemical water reduction DM Andoshe*, G Jin*, CS Lee*, C Kim, KC Kwon, S Choi, W Sohn, ... Advanced Sustainable Systems 2 (3), 1700142, 2018 | 43 | 2018 |
| Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth G Jin*, CS Lee*, X Liao, J Kim, Z Wang, OFN Okello, B Park, J Park, ... Science advances 5 (7), eaaw3180, 2019 | 34 | 2019 |
| Programmed band-gap modulation within van der Waals semiconductor monolayers by metalorganic vapor-phase epitaxy CS Lee*, G Jin*, SY Seo, J Kim, C Han, MY Park, H Ahn, SH Lee, S Cha, ... Chemistry of Materials 32 (12), 5084-5090, 2020 | 6 | 2020 |
Gangtae JinAssistant Professor, Department of Electronic Engineering, Gachon University在 cornell.edu 的电子邮件经过验证
