Vinod K. Sangwan
Vinod K. Sangwan
Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides
D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam
ACS nano 8 (2), 1102-1120, 2014
Effective passivation of exfoliated black phosphorus transistors against ambient degradation
JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ...
Nano letters 14 (12), 6964-6970, 2014
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam
Chemical Society Reviews 42 (7), 2824-2860, 2013
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS 2
VK Sangwan, D Jariwala, IS Kim, KS Chen, TJ Marks, LJ Lauhon, ...
Nature nanotechnology 10 (5), 403-406, 2015
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
VK Sangwan, HS Lee, H Bergeron, I Balla, ME Beck, KS Chen, ...
Nature 554 (7693), 500-504, 2018
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
D Jariwala, VK Sangwan, DJ Late, JE Johns, VP Dravid, TJ Marks, ...
Applied Physics Letters 102 (17), 173107, 2013
Gate-tunable carbon nanotube–MoS2 heterojunction pn diode
D Jariwala, VK Sangwan, CC Wu, PL Prabhumirashi, ML Geier, TJ Marks, ...
Proceedings of the National Academy of Sciences 110 (45), 18076-18080, 2013
Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2
D Jariwala, SL Howell, KS Chen, J Kang, VK Sangwan, SA Filippone, ...
Nano letters 16 (1), 497-503, 2016
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
IS Kim, VK Sangwan, D Jariwala, JD Wood, S Park, KS Chen, F Shi, ...
ACS nano 8 (10), 10551-10558, 2014
Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
VK Sangwan, HN Arnold, D Jariwala, TJ Marks, LJ Lauhon, MC Hersam
Nano letters 13 (9), 4351-4355, 2013
Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy
CC Wu, D Jariwala, VK Sangwan, TJ Marks, MC Hersam, LJ Lauhon
The Journal of Physical Chemistry Letters 4 (15), 2508-2513, 2013
Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics
VK Sangwan, RP Ortiz, JMP Alaboson, JD Emery, MJ Bedzyk, LJ Lauhon, ...
Acs Nano 6 (8), 7480-7488, 2012
Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction
S Bettis Homan, VK Sangwan, I Balla, H Bergeron, EA Weiss, MC Hersam
Nano letters 17 (1), 164-169, 2017
Electronic transport in two-dimensional materials
VK Sangwan, MC Hersam
Annual review of physical chemistry 69, 299-325, 2018
Solution-based processing of monodisperse two-dimensional nanomaterials
J Kang, VK Sangwan, JD Wood, MC Hersam
Accounts of chemical research 50 (4), 943-951, 2017
Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
SL Howell, D Jariwala, CC Wu, KS Chen, VK Sangwan, J Kang, TJ Marks, ...
Nano letters 15 (4), 2278-2284, 2015
Neuromorphic nanoelectronic materials
VK Sangwan, MC Hersam
Nature nanotechnology 15 (7), 517-528, 2020
Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors
D Jariwala, VK Sangwan, JWT Seo, W Xu, J Smith, CH Kim, LJ Lauhon, ...
Nano letters 15 (1), 416-421, 2015
LargeArea, Electronically Monodisperse, Aligned SingleWalled Carbon Nanotube Thin Films Fabricated by EvaporationDriven SelfAssembly
TA Shastry, JWT Seo, JJ Lopez, HN Arnold, JZ Kelter, VK Sangwan, ...
Small 9 (1), 45-51, 2013
ACS Nano 8, 1102 (2014)
D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam
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