| Characterization of prismatic slip in PVT-grown AlN crystals S Hu, H Fang, Y Liu, H Peng, Q Cheng, Z Chen, R Dalmau, J Britt, ... Journal of Crystal Growth 584, 126548, 2022 | 8 | 2022 |
| Analysis of dislocation contrast in synchrotron grazing-incidence x-ray topographs and ray-tracing simulation in off-axis 4h-sic crystals T Ailihumaer, H Peng, Y Liu, Q Cheng, Z Chen, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 157, 2021 | 5 | 2021 |
| Characterization of 4H-SiC lattice damage after novel high energy ion implantation Z Chen, Y Liu, H Peng, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 75, 2021 | 5 | 2021 |
| Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography Y Liu, Z Chen, S Hu, H Peng, Q Cheng, B Raghothamachar, M Dudley Journal of Crystal Growth 583, 126559, 2022 | 4 | 2022 |
| Microstructure analysis of GaN epitaxial layers during ion implantation using synchrotron X-ray topography Y Liu, H Peng, Z Chen, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 113, 2021 | 4 | 2021 |
| Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations Q Cheng, T Ailihumaer, Y Liu, H Peng, Z Chen, B Raghothamachar, ... Journal of Electronic Materials 50 (7), 4104-4117, 2021 | 3 | 2021 |
| Analysis of Basal Plane Dislocation Motion Induced by P+ Ion Implantation Using Synchrotron X-ray Topography ZY Chen, Y Liu, HY Peng, QY Cheng, SS Hu, B Raghothamachar, ... Defect and Diffusion Forum 426, 71-78, 2023 | 2 | 2023 |
| Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers QY Cheng, HY Peng, SS Hu, ZY Chen, Y Liu, B Raghothamachar, ... Materials Science Forum 1062, 366-370, 2022 | 2 | 2022 |
| Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms ZY Chen, HY Peng, Y Liu, QY Cheng, SS Hu, B Raghothamachar, ... Materials Science Forum 1062, 361-365, 2022 | 2 | 2022 |
| Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode Z Chen, Y Liu, H Peng, Q Cheng, S Hu, B Raghothamachar, M Dudley, ... ECS Journal of Solid State Science and Technology 11 (6), 065003, 2022 | 2 | 2022 |
| Prismatic Slip in AlN Crystals Grown By PVT S Hu, H Fang, Y Liu, H Peng, T Ailihumaer, Q Cheng, Z Chen, R Dalmau, ... ECS Transactions 104 (7), 57, 2021 | 2 | 2021 |
| Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers QY Cheng, HY Peng, ZY Chen, SS Hu, Y Liu, B Raghothamachar, ... Defect and Diffusion Forum 426, 57-64, 2023 | 1 | 2023 |
| Characterization of prismatic slip in SiC crystals by chemical etching method SS Hu, S Fang, Y Liu, QY Cheng, HY Peng, ZY Chen, YH Gao, C Gao, ... Materials Science Forum 1089, 45-50, 2023 | 1 | 2023 |
| Basal plane dislocation slip band characterization and epitaxial propagation in 4H SiC V Pushkarev, Q Cheng, B Raghothamachar, M Dudley Optical, Electronic and Special Materials, 51, 2023 | 1 | 2023 |
| Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples H Peng, Y Liu, Z Chen, Q Cheng, S Hu, B Raghothamachar, M Dudley, ... Journal of Crystal Growth 579, 126459, 2022 | 1 | 2022 |
| Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations Q Cheng, Z Chen, S Hu, Y Liu, B Raghothamachar, M Dudley Materials Science in Semiconductor Processing 174, 108207, 2024 | | 2024 |
| Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals S Hu, Y Liu, Q Cheng, Z Chen, X Tong, B Raghothamachar, M Dudley Journal of Crystal Growth 628, 127542, 2024 | | 2024 |
| Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography Z Chen, Y Liu, Q Cheng, S Hu, B Raghothamachar, M Dudley Journal of Crystal Growth 627, 127535, 2024 | | 2024 |
| Investigating the Distribution Pattern of Threading Edge Dislocation Low Angle Grain Boundaries in 4H-SiC Wafers Using Synchrotron X-Ray Topography Q Cheng, Y Liu, Z Chen, S Hu, B Raghothamachar, M Dudley Electrochemical Society Meeting Abstracts 244, 1696-1696, 2023 | | 2023 |
| Investigation of Growth Sectors in Gallium Nitride Substrate Wafers from Ammonothermal and Patterned Hvpe Growth Methods Y Liu, S Hu, Z Chen, Q Cheng, B Raghothamachar, M Dudley Electrochemical Society Meeting Abstracts 244, 1686-1686, 2023 | | 2023 |
