| Advanced interconnects for ULSI technology M Baklanov, PS Ho, E Zschech John Wiley & Sons, 2012 | 148 | 2012 |
| Applying X-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias LW Kong, JR Lloyd, KB Yeap, E Zschech, A Rudack, M Liehr, A Diebold Journal of applied physics 110 (5), 2011 | 65 | 2011 |
| 3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy LW Kong, AC Rudack, P Krueger, E Zschech, S Arkalgud, AC Diebold Microelectronic Engineering 92, 24-28, 2012 | 40 | 2012 |
| Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study KB Yeap, E Zschech, UD Hangen, T Wyrobek, LW Kong, A Karmakar, ... Journal of Materials Research 27 (1), 339-348, 2012 | 28 | 2012 |
| Sub‐imaging techniques for 3D‐interconnects on bonded wafer pairs LW Kong, P Krueger, E Zschech, AC Rudack, S Arkalgud, AC Diebold AIP Conference Proceedings 1300 (1), 221-228, 2010 | 22 | 2010 |
| Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry VK Kamineni, P Singh, LW Kong, J Hudnall, J Qureshi, C Taylor, ... Thin Solid Films 519 (9), 2924-2928, 2011 | 13 | 2011 |
| Infrared microscopy for overlay and defect metrology on 3d-interconnect bonded wafers AC Rudack, LW Kong, GG Baker 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 347-352, 2010 | 13 | 2010 |
| Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy LW Kong, JR Lloyd, M Liehr, AC Rudack, S Arkalgud, AC Diebold Metrology, Inspection, and Process Control for Microlithography XXVI 8324 …, 2012 | 9 | 2012 |
| Thermally induced void growth in through-silicon vias LW Kong, JR Lloyd, AC Rudack, AC Diebold Journal of Micro/Nanolithography, MEMS, and MOEMS 12 (2), 023010-023010, 2013 | 5 | 2013 |
| 3D Interconnect Technology JU Knickerbocker, LW Kong, S Niese, A Diebold, E Zschech Advanced Interconnects for ULSI Technology, 435-490, 2012 | 4 | 2012 |
| Characterization and prediction of performance loss and MTTR during fault recovery on scale-out storage using DOE & RSM: a case study with Ceph LW Kong, O Moreno IEEE Transactions on Cloud Computing 9 (2), 492-503, 2018 | 2 | 2018 |
| Known void size micro-bump, a novel standard of 3D X-ray computed tomography in-line metrology for accuracy assessment and monitoring LW Kong, OA Martin 2018 IEEE International Instrumentation and Measurement Technology …, 2018 | 2 | 2018 |
| Applying X-ray microscopy and finite element modeling (FEM) to identify the mechanism of stress-assisted void growth in through silicon via (TSV) LW Kong State University of New York at Albany, 2011 | 2 | 2011 |
| A Path Toward Non-Destructive 3D Metrology for Through-Silicon Vias J Gelb, LW Kong, L Hunter, A Gu, T Fong, AC Diebold, SH Lau, W Yun International Symposium on Microelectronics 2011 (1), 000017-000024, 2011 | 2 | 2011 |
| Performance optimization in scale-out storage using design of experiment as heuristic LW Kong 2017 IEEE International Conference on Big Data (Big Data), 1467-1474, 2017 | 1 | 2017 |
| Scanning Acoustic Microscope of 3D‐Interconnect L Wai Kong, AC Diebold, A Rudack, S Arkalgud AIP Conference Proceedings 1173 (1), 159-162, 2009 | | 2009 |
| IDENTIFYING THE MECHANISM OF STRESS-ASSISTED VOID GROWTH IN THROUGH SILICON VIA (TSV) BY X-RAY MICROSCOPY AND FINITE ELEMENT MODELING LW Kong, JR Lloyd, M Liehr, AC Diebold, E Zschech, AC Rudack | | |
