| Ion gated synaptic transistors based on 2D van der Waals crystals with tunable diffusive dynamics J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ... Advanced Materials 30 (21), 1800195, 2018 | 450 | 2018 |
| New insights into the physical origin of negative capacitance and hysteresis in NCFETs H Wang, M Yang, Q Huang, K Zhu, Y Zhao, Z Liang, C Chen, Z Wang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2018 | 59 | 2018 |
| Capacitor-less stochastic leaky-FeFET neuron of both excitatory and inhibitory connections for SNN with reduced hardware cost J Luo, L Yu, T Liu, M Yang, Z Fu, Z Liang, L Chen, C Chen, S Liu, S Wu, ... 2019 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2019 | 52 | 2019 |
| A novel negative capacitance tunnel FET with improved subthreshold swing and nearly non-hysteresis through hybrid modulation Y Zhao, Z Liang, Q Huang, C Chen, M Yang, Z Sun, K Zhu, H Wang, S Liu, ... IEEE electron device letters 40 (6), 989-992, 2019 | 31 | 2019 |
| A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel Z Liang, K Tang, J Dong, Q Li, Y Zhou, R Zhu, Y Wu, D Han, R Huang 2021 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2021 | 19 | 2021 |
| Ferroelectric and interlayer co-optimization with in-depth analysis for high endurance FeFET Y Zhou, Z Liang, W Luo, M Yu, R Zhu, X Lv, J Li, Q Huang, F Liu, K Tang, ... 2022 International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2022 | 15 | 2022 |
| Experimental study on the transient response of negative capacitance tunnel FET Y Zhao, Z Liang, Q Huang, H Wang, Y Peng, G Han, R Huang 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 88-90, 2019 | 9 | 2019 |
| First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf 0.5 Zr 0.5 O 2 film during electrical cycling L Chen, Z Liang, S Shao, Q Huang, K Tang, R Huang Nanoscale 15 (15), 7014-7022, 2023 | 7 | 2023 |
| Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018) J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ... Advanced Materials 30 (21), 1870149, 2018 | 7 | 2018 |
| Origin of steep subthreshold swing within the low drain current range in negative capacitance field effect transistor C Su, Q Huang, M Yang, L Chen, Z Liang, R Huang 2020 China Semiconductor Technology International Conference (CSTIC), 1-3, 2020 | 4 | 2020 |
| Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications Z Liang, Y Zhao, K Wang, J Zhang, J Zhang, M Li, R Huang, Q Huang Science China Information Sciences 66 (6), 169406, 2023 | 2 | 2023 |
| New understanding of negative capacitance devices for low-power logic applications Q Huang, H Wang, Y Zhao, M Yang, Z Liang, K Zhu, R Huang 2019 China Semiconductor Technology International Conference (CSTIC), 1-3, 2019 | 2 | 2019 |
| New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and … C Su, Z Liang, Z Fu, S Xu, K Wang, P Cai, L Chen, R Huang, Q Huang ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 1 | 2023 |
| A Novel Electrical Isolation Solution for Tunnel FET Integration T Li, Q Huang, L Ye, Y Zhong, M Yang, Y Li, Y Li, Z Liang, R Huang 2020 China Semiconductor Technology International Conference (CSTIC), 1-3, 2020 | | 2020 |
| Investigation of Negative Capacitance Effect from Domain Switching Dynamics K Zhu, Q Huang, H Wang, M Yang, Y Zhao, Z Liang, H Pan, J Ma, ... 2019 China Semiconductor Technology International Conference (CSTIC), 1-3, 2019 | | 2019 |
