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Prasanna Venkatesan Ravindran
Prasanna Venkatesan Ravindran
Other namesPrasanna V Ravindran, P V Ravindran, Prasanna Ravindran
PhD Student, Department of Electrical and Computer Engineering, Georgia Institute of Technology
Verified email at gatech.edu
Title
Cited by
Cited by
Year
BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update
KA Aabrar, SG Kirtania, FX Liang, J Gomez, M San Jose, Y Luo, H Ye, ...
IEEE Transactions on Electron Devices 69 (4), 2094-2100, 2022
292022
Antiferroelectric negative capacitance from a structural phase transition in zirconia
M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ...
Nature communications 13 (1), 1228, 2022
272022
BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry
KA Aabrar, J Gomez, SG Kirtania, M San Jose, Y Luo, PG Ravikumar, ...
2021 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2021
252021
Why Do Ferroelectrics Exhibit Negative Capacitance?
M Hoffmann, PV Ravindran, AI Khan
Materials 12 (22), 3743, 2019
202019
2021 IEEE Int. Electron Devices Meeting (IEDM)
KA Aabrar, J Gomez, SG Kirtania, MS Jose, Y Luo, PG Ravikumar, ...
IEEE, 2021
102021
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling
G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
82022
A Ge-channel ferroelectric field effect transistor with logic-compatible write voltage
D Das, PV Ravindran, C Park, N Tasneem, Z Wang, H Chen, W Chern, ...
IEEE Electron Device Letters 44 (2), 257-260, 2022
62022
Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling
G Choe, PV Ravindran, J Hur, M Lederer, A Reck, A Khan, S Yu
IEEE Transactions on Electron Devices 70 (4), 2015-2020, 2023
52023
Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature
J Hur, C Park, G Choe, PV Ravindran, AI Khan, S Yu
IEEE Transactions on Electron Devices 69 (10), 5948-5951, 2022
42022
A microscopic “toy” model of ferroelectric negative capacitance
M Hoffmann, PV Ravindran, AI Khan
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
42020
Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state
N Tasneem, PV Ravindran, Z Wang, J Gomez, J Hur, S Yu, S Datta, ...
Applied Physics Letters 118 (12), 2021
32021
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications
D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
Conditions for Domain-Free Negative Capacitance
PV Ravindran, PG Ravikumar, AI Khan
IEEE Transactions on Electron Devices, 2023
12023
Low-Frequency Noise Characteristics of BEOL-Compatible IWO Transistor
YC Luo, H Ye, W Chakraborty, J Hur, PV Ravindran, AI Khan, S Datta, ...
2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022
12022
Quantitative Electrostatic Potential Mapping in Dense Polycrystalline Functional Materials and Devices
DB Durham, KA Aabrar, PV Ravindran, NJ Zaluzec, L Stan, AI Khan, ...
Microscopy and Microanalysis 29 (Supplement_1), 280-281, 2023
2023
Quantum phase transition in ferroelectric-paraelectric heterostructures
PV Ravindran, AI Khan
arXiv preprint arXiv:2203.02058, 2022
2022
Quantum criticality in ferroelectric-paraelectric heterostructures
PV Ravindran, AI Khan
Bulletin of the American Physical Society, 2022
2022
Materials opportunities for low-energy computing
A Khan, HJ Yoo, SL Shinde, PV Ravindran
MRS Bulletin, 1-5, 2021
2021
Measurement of Temperature Variation in Water using Correlation Microwave Radiometer
R Prasanna Venkatesan, S Sahoo
flotek.g, 2017
2017
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Articles 1–19