Niranjan S

202020212022202320241 3 13 17 3

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Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in
Prosenjit SenIndian Institute of Science, BangaloreVerified email at cense.iisc.ernet.in
Nayana RemeshPhD Scholar, Indian Institute of Science, BangaloreVerified email at iisc.ac.in
Ankit S RaoPostdoctoral Researcher, University of MinnesotaVerified email at umn.edu
VASUNDARA PATEL K Sprofessor of electronic and communication, BMS COLLEGE OF ENGGVerified email at bmsce.ac.in
Pavani Vamsi Krishna NittalaMicron Technology, University of Chicago and Argonne National LaboratoryVerified email at micron.com
Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk

Niranjan S

Center for Nanoscience and Engineering (CeNSE), Indian institute of Science (IISc), Bangalore

Verified email at iisc.ac.in


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Performance comparison of Au-based and Au-free AlGaN/GaN HEMT on silicon S Niranjan, A Rao, R Muralidharan, P Sen, DN Nath IEEE Transactions on Electron Devices 69 (3), 1014-1019, 2022	9	2022
Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme I Guiney, CJ Humphreys, P Sen, R Muralidharan, DN Nath Journal of Vacuum Science & Technology B 38 (3), 2020	6	2020
Enabling transfer of ultrathin layers of GaN for demonstration of a heterogenous stack on copper heat spreader PVK Nittala, N Remesh, S Niranjan, S Tasneem, S Raghavan, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 10 …, 2019	6	2019
A novel design of ternary level SRAM cell using CNTFET S Niranjan, S Sandesh, VP KS 2018 International Conference on Networking, Embedded and Wireless Systems …, 2018	6	2018
Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate S Niranjan, R Muralidharan, P Sen, DN Nath IEEE Transactions on Electron Devices 69 (8), 4212-4217, 2022	5	2022
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices KN Subhani, N Remesh, S Niranjan, S Raghavan, R Muralidharan, ... Solid-State Electronics 186, 108188, 2021	5	2021
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance S Niranjan		2023

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