| 28-nm FD-SOI CMOS RF figures of merit down to 4.2 K L Nyssens, A Halder, BK Esfeh, N Planes, D Flandre, V Kilchytska, ... IEEE Journal of the Electron Devices Society 8, 646-654, 2020 | 31 | 2020 |
| Self-heating in FDSOI UTBB MOSFETs at cryogenic temperatures and its effect on analog figures of merit L Nyssens, A Halder, BK Esfeh, N Planes, M Haond, D Flandre, JP Raskin, ... IEEE Journal of the Electron Devices Society 8, 789-796, 2020 | 13 | 2020 |
| On the separate extraction of self-heating and substrate effects in FD-SOI MOSFET L Nyssens, M Rack, A Halder, JP Raskin, V Kilchytska IEEE Electron Device Letters 42 (5), 665-668, 2021 | 10 | 2021 |
| Extensive electrical characterization methodology of advanced MOSFETs towards analog and RF applications V Kilchytska, S Makovejev, BK Esfeh, L Nyssens, A Halder, JP Raskin, ... IEEE Journal of the Electron Devices Society 9, 500-510, 2021 | 10 | 2021 |
| Self-heating in 28 FDSOI UTBB MOSFETs at cryogenic temperatures L Nyssens, A Halder, BK Esfeh, N Planes, M Haond, D Flandre, JP Raskin, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 9 | 2019 |
| Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs A Halder, L Nyssens, M Rack, D Lederer, JP Raskin, V Kilchytska Solid-State Electronics 184, 108088, 2021 | 6 | 2021 |
| Moment based delay modelling for on-chip RC global VLSI interconnect for unit ramp input A Halder, V Maheshwari, A Goyal, R Kar, D Mandal, AK Bhattacharjee 2012 Ninth International Conference on Computer Science and Software …, 2012 | 5 | 2012 |
| Effect of heat sink in back-end of line on self-heating in 22 nm FDSOI MOSFETs A Halder, L Nyssens, M Rack, JP Raskin, V Kilchytska 2020 Joint International EUROSOI Workshop and International Conference on …, 2020 | 4 | 2020 |
| 28 FDSOI RF Figures of Merit down to 4.2 K L Nyssens, A Halder, BK Esfeh, N Planes, D Flandre, V Kilchytska, ... 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2019 | 4 | 2019 |
| 22 nm FD-SOI MOSFET figures of merit at high temperatures upto 175° C A Halder, L Nyssens, M Rack, D Lederer, V Kilchytska, JP Raskin 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2022 | 3 | 2022 |
| Impact of High Temperature Up to 175 C on the DC and RF Performances of 22-nm FD-SOI MOSFETs A Halder, L Nyssens, M Vanbrabant, M Rack, D Lederer, V Kilchytska, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI L Nyssens, M Rack, A Halder, M Vanbrabant, V Kilchytska, JP Raskin 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 1 | 2021 |
| Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs A Halder, L Nyssens, D Lederer, V Kilchytska, JP Raskin Solid-State Electronics 207, 108706, 2023 | | 2023 |
| Advanced MOSFETs Electrical Characterization for Further Analog and RF applications V Kilchytska, S Makovejev, BK Esfeh, L Nyssens, A Halder, JP Raskin, ... SBMicro, 2021 | | 2021 |
| Electrical characterization of advanced MOSFETs towards analog and RF applications V Kilchytska, S Makovejev, BK Esfeh, L Nyssens, A Halder, JP Raskin, ... 2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020 | | 2020 |
| Figures of merit of nanoscale transistors at cryogenic temperature: 28nm UTBB FD SOI nMOSFET case study D Flandre, BK Esfeh, L Nyssen, A Halder, V Kilchytska, JP Raskin 3rd Symposium on Schottky barrier MOS devices, 2019 | | 2019 |
| Author Country Affiliation A Kloes, A Zhuk, AA Amelenan, A Reyes-Barranca, A Grushin, ... | | |
Jean-Pierre RaskinUniversité catholique de Louvain, Engineering School of LouvainVerified email at uclouvain.be
