| Analysis of mobility for 4H-SiC N/P-channel MOSFETs up to 300° C L Yang, Y Bai, C Li, H Chen, Z Han, Y Tang, J Hao, C Yang, X Tian, J Lu, ... IEEE Transactions on Electron Devices 68 (8), 3936-3941, 2021 | 14 | 2021 |
| High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation XY Liu, JL Hao, NN You, Y Bai, YD Tang, CY Yang, SK Wang Chinese Physics B 29 (3), 037301, 2020 | 14 | 2020 |
| High-pressure microwave plasma oxidation of 4H-SiC with low interface trap density X Liu, J Hao, N You, Y Bai, S Wang AIP Advances 9 (12), 2019 | 14 | 2019 |
| Microwave plasma oxidation kinetics of SiC based on fast oxygen exchange N You, X Liu, J Hao, Y Bai, S Wang Vacuum 182, 109762, 2020 | 9 | 2020 |
| Bias temperature instability of 4H-SiC p-and n-channel MOSFETs induced by negative stress at 200° C L Yang, Y Bai, C Li, H Chen, Y Tang, J Hao, C Yang, X Tian, J Lu, X Liu IEEE Transactions on Electron Devices 69 (6), 3042-3046, 2022 | 8 | 2022 |
| Analysis of transient surge current mechanism in SiC MPS diode with the transition region A Wang, Y Bai, Y Tang, C Li, Z Han, J Lu, H Chen, X Tian, C Yang, J Hao, ... IEEE Transactions on Electron Devices 68 (12), 6330-6337, 2021 | 6 | 2021 |
| Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors P Liu, JL Hao, SK Wang, NN You, QY Hu, Q Zhang, Y Bai, XY Liu Chinese Physics B 30 (7), 077303, 2021 | 6 | 2021 |
| Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology A Wang, Y Bai, C Li, Z Wu, Y Tang, X Tian, C Yang, J Hao, X Liu Semiconductor Science and Technology 38 (2), 025008, 2022 | 3 | 2022 |
| Simulation study for the structural cell design optimization of 15kV SiC p-channel IGBTs XL Tian, B Tan, Y Bai, JL Hao, CY Yang, XY Liu Materials Science Forum 963, 666-669, 2019 | 3 | 2019 |
| Impact of Post-Trench Process Treatment on Electron Scattering Mechanisms in 4H-SiC Trench MOSFETs Z Dong, Y Bai, C Yang, C Li, Y Tang, J Hao, X Tian, X Liu IEEE Transactions on Electron Devices 70 (4), 1782-1788, 2023 | 2 | 2023 |
| Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200° C L Yang, Y Bai, C Li, C Yang, H Chen, Y Tang, J Hao, X Tian, X Liu IEEE Transactions on Electron Devices 70 (1), 379-382, 2022 | 2 | 2022 |
| Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation JL Hao, Y Bai, XY Liu, CZ Li, YD Tang, H Chen, XL Tian, J Lu, SK Wang Chinese Physics B 29 (9), 097301, 2020 | 2 | 2020 |
| Designing high k dielectric films with LiPON–Al2O3 hybrid structure by atomic layer deposition Z Feng, Y Wang, J Hao, M Jing, F Lu, W Wang, Y Cheng, S Wang, H Liu, ... Chinese Physics B 31 (5), 057701, 2022 | 1 | 2022 |
| The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET H Chen, J Hao, QF Zhou, Q Feng, Y Bai 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 1 | 2018 |
| Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS with Different Die Attach Materials under 300° C Power Cycle Stress Z Hu, Y Tang, Y Zhang, R Gao, X Li, Y Bai, X Tian, J Hao, C Yang, ... IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024 | | 2024 |
| Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs L Qiu, Y Bai, J Ding, J Hao, Y Tang, C Yang, X Tian, C Li, X Liu IEEE Transactions on Electron Devices, 2024 | | 2024 |
| A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior VF· C res figure of merit W Wei, X Tian, X Liu, X Wang, Y Bai, Y Tang, W Jiang, C Yang, J Hao, ... Japanese Journal of Applied Physics 63 (2), 02SP94, 2024 | | 2024 |
| Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals Z Wu, Y Bai, C Yang, C Li, J Hao, X Tian, A Wang, Y Tang, J Lu, X Liu Electronics 12 (9), 2133, 2023 | | 2023 |
| High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation 刘新宇， 郝继龙， 尤楠楠， 白云， 汤益丹， 杨成樾， 王盛凯 Chinese Physics B 3, 2020 | | 2020 |
| Rapid Growth of SiO2 on SiC with Low Ditusing High Pressure Microwave Oxygen Plasma S Wang, J Hao, N You, Y Bai, X Liu 2019 IEEE 13th International Conference on ASIC (ASICON), 1-4, 2019 | | 2019 |
Shengkai WangInstitute of Microelectronics, Chinese Academy of SciencesVerified email at ime.ac.cn
