| Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation L Ding, TP Chen, Y Liu, M Yang, JI Wong, YC Liu, AD Trigg, FR Zhu, ... Journal of applied physics 101 (10), 2007 | 58 | 2007 |
| Microstructure of Magnetron Sputtered Amorphous SiOx Films: Formation of Amorphous Si Core−Shell Nanoclusters WL Zhang, S Zhang, M Yang, TP Chen The Journal of Physical Chemistry C 114 (6), 2414-2420, 2010 | 53 | 2010 |
| Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals CY Ng, TP Chen, M Yang, JB Yang, L Ding, CM Li, A Du, A Trigg IEEE transactions on electron devices 53 (4), 663-667, 2006 | 49 | 2006 |
| Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability JB Yang, TP Chen, SS Tan, L Chan Applied physics letters 88 (17), 2006 | 48 | 2006 |
| Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions ZH Cen, TP Chen, L Ding, Y Liu, JI Wong, M Yang, Z Liu, WP Goh, FR Zhu, ... Applied Physics Letters 94 (4), 2009 | 46 | 2009 |
| Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film ZH Cen, TP Chen, Z Liu, Y Liu, L Ding, M Yang, JI Wong, SF Yu, WP Goh Optics Express 18 (19), 20439-20444, 2010 | 33 | 2010 |
| Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure M Yang, TP Chen, Z Liu, JI Wong, WL Zhang, S Zhang, Y Liu Journal of Applied Physics 106 (10), 2009 | 31 | 2009 |
| Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure Y Liu, TP Chen, L Ding, M Yang, JI Wong, CY Ng, SF Yu, ZX Li, C Yuen, ... Journal of Applied Physics 101 (10), 2007 | 28 | 2007 |
| The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films L Ding, TP Chen, Y Liu, M Yang, JI Wong, KY Liu, FR Zhu, S Fung Nanotechnology 18 (45), 455306, 2007 | 27 | 2007 |
| Electroluminescence of as-sputtered silicon-rich SiOx films WL Zhang, S Zhang, M Yang, Z Liu, ZH Cen, T Chen, D Liu Vacuum 84 (8), 1043-1048, 2010 | 24 | 2010 |
| Charging-Induced Changes in Reverse Current–Voltage Characteristics of Al/Al-Rich Diodes W Zhu, TP Chen, Y Liu, M Yang, S Zhang, WL Zhang, S Fung IEEE transactions on electron devices 56 (9), 2060-2064, 2009 | 24 | 2009 |
| Charging effect of Al2O3 thin films containing Al nanocrystals Y Liu, TP Chen, W Zhu, M Yang, ZH Cen, JI Wong, YB Li, S Zhang, ... Applied Physics Letters 93 (14), 2008 | 24 | 2008 |
| Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix ZH Cen, TP Chen, L Ding, Y Liu, M Yang, JI Wong, Z Liu, YC Liu, S Fung Applied Physics Letters 93 (2), 2008 | 22 | 2008 |
| Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation M Yang, TP Chen, JI Wong, CY Ng, Y Liu, L Ding, S Fung, AD Trigg, ... Journal of applied physics 101 (12), 2007 | 22 | 2007 |
| Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures W Zhu, TP Chen, M Yang, Y Liu, S Fung IEEE transactions on electron devices 59 (9), 2363-2367, 2012 | 21 | 2012 |
| Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing ZH Cen, TP Chen, L Ding, Y Liu, JI Wong, M Yang, Z Liu, WP Goh, FR Zhu, ... Journal of Applied Physics 105 (12), 2009 | 21 | 2009 |
| Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich /p-Si Diode W Zhu, TP Chen, Y Liu, M Yang, S Fung Ieee Transactions on Electron Devices 58 (4), 960-965, 2011 | 20 | 2011 |
| Note: Electrochemical cell for in operando X-ray diffraction measurements on a conventional X-ray diffractometer S Hartung, N Bucher, R Bucher, M Srinivasan Review of Scientific Instruments 86 (8), 2015 | 19* | 2015 |
| Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance CY Ng, TP Chen, L Ding, M Yang, JI Wong, P Zhao, XH Yang, KY Liu, ... IEEE transactions on electron devices 53 (4), 730-736, 2006 | 19 | 2006 |
| The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals R Ang, TP Chen, M Yang, JI Wong, MD Yi Journal of Physics D: Applied Physics 43 (1), 015102, 2009 | 15 | 2009 |
Dr. Jen-It WONG (黄振益)JEOL AsiaVerified email at jeolasia.com.sg
