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Kalpna Rajput
Kalpna Rajput
SINTEF Industry
在 sintef.no 的电子邮件经过验证
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引用次数
引用次数
年份
Observation of an Unexpected n-Type Semiconducting Behavior in the New Ternary Zintl Phase Eu3InAs3
K Rajput, S Baranets, S Bobev
Chemistry of Materials 32 (22), 9616-9626, 2020
262020
Increasing figure-of-merit of ZrNiSn half-Heusler alloy by minimal substitution and thermal conductivity reduction
MM Mallick, K Rajput, S Vitta
Journal of Materials Science: Materials in Electronics 30, 6139-6147, 2019
142019
Effect of Trivalent Rare Earth, Dy3+ Substitution for Ba2+ on Low Temperature Magnetic and High Temperature Thermoelectric Properties of Type-I Clathrate, Ba8Al16Si …
K Rajput, S Vitta
ACS Applied Energy Materials 2 (6), 4255-4263, 2019
22019
Thermoelectric properties of rare earth containing type-I Clathrate compound, Dy8Al16Si30
K Rajput, S Vitta
Journal of Materials Science: Materials in Electronics 27, 10303-10308, 2016
22016
Thermoelectric properties of rare earth filled type-I like Clathrate, Dy8Al16Si30
K Rajput, S Vitta
arXiv preprint arXiv:1509.08277, 2015
22015
Thermoelectric properties of Fe-substituted layered compound, LiCo1−x Fe x O2
M Mallick, K Rajput, S Vitta
Ionics 23, 2651-2655, 2017
12017
Comparative Study of Indium as a Filler or as a Substitute in Yb-Filled Ni-Doped CoSb3
KP Dabral, K Rajput, K Dabral, AS Verma
ECS Advances 2 (4), 044001, 2023
2023
High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures
M Stange, TO Sunde, R Dahl-Hansen, K Rajput, J Seland Graff, BD Belle, ...
Coatings 13 (12), 2030, 2023
2023
Reply to comments on “Thermoelectric properties of rare earth containing type-I clathrate compound Dy8Al16Si30
K Rajput, S Vitta
Journal of Materials Science: Materials in Electronics 28, 1149-1150, 2017
2017
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