Antibacterial activity of large-area monolayer graphene film manipulated by charge transfer J Li, G Wang, H Zhu, M Zhang, X Zheng, Z Di, X Liu, X Wang Scientific reports 4 (1), 4359, 2014 | 522 | 2014 |
Facile and highly effective synthesis of controllable lattice sulfur-doped graphene quantum dots via hydrothermal treatment of durian G Wang, Q Guo, D Chen, Z Liu, X Zheng, A Xu, S Yang, G Ding ACS applied materials & interfaces 10 (6), 5750-5759, 2018 | 230 | 2018 |
Robust ultra-low-friction state of graphene via moiré superlattice confinement X Zheng, L Gao, Q Yao, Q Li, M Zhang, X Xie, S Qiao, G Wang, T Ma, Z Di, ... Nature communications 7 (1), 13204, 2016 | 128 | 2016 |
Programmable graphene nanobubbles with three-fold symmetric pseudo-magnetic fields P Jia, W Chen, J Qiao, M Zhang, X Zheng, Z Xue, R Liang, C Tian, L He, ... Nature Communications 10 (1), 3127, 2019 | 85 | 2019 |
Fluorinated Graphene in Interface Engineering of GeBased Nanoelectronics X Zheng, M Zhang, X Shi, G Wang, L Zheng, Y Yu, A Huang, PK Chu, ... Advanced Functional Materials 25 (12), 1805-1813, 2015 | 42 | 2015 |
Interface dipole engineering in metal gate/high-k stacks AP Huang, XH Zheng, ZS Xiao, M Wang, ZF Di, PK Chu Chinese Science Bulletin 57, 2872-2878, 2012 | 27 | 2012 |
Tuning local electrical conductivity via fine atomic scale structures of two-dimensional interfaces S Zhang, L Gao, A Song, X Zheng, Q Yao, T Ma, Z Di, XQ Feng, Q Li Nano Letters 18 (9), 6030-6036, 2018 | 26 | 2018 |
Barrier Reduction of Lithium Ion Tunneling through Graphene with Hybrid Defects: FirstPrinciples Calculations Y Xin, A Huang, Q Hu, H Shi, M Wang, Z Xiao, X Zheng, Z Di, PK Chu Advanced Theory and Simulations 1 (2), 1700009, 2018 | 16 | 2018 |
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin-SiO2/Si p-channel metal-oxide-semiconductor stacks XH Zheng, AP Huang, ZS Xiao, ZC Yang, M Wang, XW Zhang, WW Wang, ... Applied Physics Letters 97 (13), 2010 | 16 | 2010 |
Flat-band voltage shift in metal-gate/high-k/Si stacks AP Huang, XH Zheng, ZS Xiao, ZC Yang, M Wang, KC Paul, XD Yang Chinese Physics B 20 (9), 097303, 2011 | 13 | 2011 |
Fermi-Level Pinning at Metal/High-Interface Influenced by Electron State Density of Metal Gate ZC Yang, AP Huang, XH Zheng, ZS Xiao, XY Liu, XW Zhang, PK Chu, ... IEEE electron device letters 31 (10), 1101-1103, 2010 | 11 | 2010 |
Tunable band offsets in the BP/P 4 O 10 van der Waals heterostructure: first-principles calculations W Dou, A Huang, H Shi, X Zhang, X Zheng, M Wang, Z Xiao, L Liu, ... Physical Chemistry Chemical Physics 20 (47), 29931-29938, 2018 | 9 | 2018 |
Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation D Chen, Q Guo, S Yang, Z Liu, X Zheng, N Zhang, A Xu, B Wang, G Wang, ... Journal of materials science 53, 2631-2637, 2018 | 7 | 2018 |
Direct growth of single-layer graphene on Ni surface manipulated by Si barrier G Wang, J Li, D Chen, L Zheng, X Zheng, Q Guo, X Wei, G Ding, M Zhang, ... Applied Physics Letters 104 (21), 2014 | 7 | 2014 |
Progress in rare earth doped Hf-based high-k gate dielectrics XH Zheng, AP Huang, ZC Yang, ZS Xiao, M Wang, GA Cheng Acta Phys. Sin. 60 (1), 2011 | 7 | 2011 |
SeedInitiated Synthesis and Tunable Doping Graphene for HighPerformance Photodetectors J Li, S Yang, G Wang, T Huang, Q Guo, Z Liu, P He, X Zheng, Y Wang, ... Advanced Optical Materials 7 (24), 1901388, 2019 | 5 | 2019 |
Catalyst-free approach for growth of graphene sheets on high-density silica nanowires by CVD Z Wang, Z Xue, G Wang, J Dai, X Zheng, J Ma, Y Li, M Zhang Materials Letters 162, 165-168, 2016 | 5 | 2016 |
Manufacturing method of graphene modulated high-K oxide and metal gate MOS device Z Di, X Zheng, G Wang, M Zhang, X Wang US Patent 9,601,337, 2017 | 4 | 2017 |
Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack XH Zheng, AP Huang, ZS Xiao, M Wang, XY Liu, ZW Wu, PK Chu Applied Physics Letters 99 (13), 2011 | 4 | 2011 |
Progress in conductive properties of carbon-based doped polymer CAO Qingchao, H Anping, W ZHANG Polymer Materials Science & Engineering 28 (4), 177-181, 2012 | 3 | 2012 |