| Hybrid system combining two-dimensional materials and ferroelectrics and its application in photodetection Y Sun, G Niu, W Ren, X Meng, J Zhao, W Luo, ZG Ye, YH Xie ACS nano 15 (7), 10982-11013, 2021 | 59 | 2021 |
| 946 nm Nd: YAG double Q-switched laser based on monolayer WSe2 saturable absorber Y Sun, Y Bai, D Li, L Hou, B Bai, Y Gong, L Yu, J Bai Optics Express 25 (18), 21037-21048, 2017 | 38 | 2017 |
| A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0. 5Zr0. 5O2 films with uniform polarization and high Curie temperature Y Wang, Q Wang, J Zhao, T Niermann, Y Liu, L Dai, K Zheng, Y Sun, ... Applied Materials Today 29, 101587, 2022 | 25 | 2022 |
| Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge L Dai, J Zhao, J Li, B Chen, S Zhai, Z Xue, Z Di, B Feng, Y Sun, Y Luo, ... Nature Communications 13 (1), 2990, 2022 | 25 | 2022 |
| Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts Y Sun, L Jiang, Z Wang, Z Hou, L Dai, Y Wang, J Zhao, YH Xie, L Zhao, ... ACS nano 16 (12), 20272-20280, 2022 | 22 | 2022 |
| Polarization behavior oflead-free 0.94 (Bi0. 5Na0. 5) TiO3-0.06 BaTiO3 thin films with enhanced ferroelectric properties J Zhao, G Niu, W Ren, L Wang, N Zhang, Y Sun, Q Wang, P Shi, M Liu, ... Journal of the European Ceramic Society 40 (12), 3928-3935, 2020 | 20 | 2020 |
| Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes Y Wang, G Niu, Q Wang, S Roy, L Dai, H Wu, Y Sun, S Song, Z Song, ... Nanotechnology 31 (20), 205203, 2020 | 14 | 2020 |
| Double Q-switched 946 nm laser with MgO:LN electro-optic crystal and MoSe2 saturable absorber B Bai, Y Bai, D Li, Y Sun, J Li, J Bai Chinese Optics Letters 16 (3), 031402, 2018 | 13 | 2018 |
| Pulsed LD side-pumped MgO: LN electro-optic cavity-dumped 1123 nm Nd: YAG laser with short pulse width and high peak power Y Bai, B Bai, D Li, Y Sun, J Li, L Hou, M Hu, J Bai High Power Laser Science and Engineering 6, e4, 2018 | 7 | 2018 |
| Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate Y Sun, G Niu, W Ren, J Zhao, Y Wang, H Wu, L Jiang, L Dai, YH Xie, ... AIP Advances 11 (6), 2021 | 5 | 2021 |
| Wavelength tunable CW red laser generated based on an intracavity-SFG composite cavity ZN Zhang, Y Bai, GZ Lei, B Bai, YX Sun, MX Hu, C Wang, JT Bai Laser Physics Letters 13 (12), 125402, 2016 | 4 | 2016 |
| Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3− δ films directly grown on Ge (001) without surface passivation L Dai, G Niu, J Zhao, Y Xue, R Luo, B Chen, R An, Y Sun, B Feng, S Ding, ... Journal of Applied Physics 129 (4), 2021 | 2 | 2021 |
| Carbon nanotube network film-based field-effect transistor interface state optimization by ambient air annealing Z Hou, Y Liu, G Niu, Y Sun, J Li, J Zhao, S Wu Journal of Applied Physics 133 (12), 2023 | 1 | 2023 |
| Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate Y Sun, Y Wang, Z Wang, L Jiang, Z Hou, L Dai, J Zhao, YH Xie, L Zhao, ... Advanced Functional Materials, 2402185, 2024 | | 2024 |
| Linear and Nonlinear Optical Response of Monolayer Two-dimensional Transition Metal Dichalcogenide MoSe2 and WSe2 Y Sun, B Zhao, Y Bai, M He, J Bai CLEO: Applications and Technology, JTh2A. 92, 2018 | | 2018 |
