| Hysteresis modulation on van der Waals‐based ferroelectric field‐effect transistor by interfacial passivation technique and its application in optic neural networks H Jeon, SG Kim, J Park, SH Kim, E Park, J Kim, HY Yu Small 16 (49), 2004371, 2020 | 34 | 2020 |
| Nitrogen-induced enhancement of synaptic weight reliability in titanium oxide-based resistive artificial synapse and demonstration of the reliability effect on the neuromorphic … J Park, E Park, S Kim, HY Yu ACS applied materials & interfaces 11 (35), 32178-32185, 2019 | 24 | 2019 |
| Performance analysis on complementary FET (CFET) relative to standard CMOS with nanosheet FET SG Jung, D Jang, SJ Min, E Park, HY Yu IEEE Journal of the Electron Devices Society 10, 78-82, 2021 | 22 | 2021 |
| An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement T Kim, SH Kim, JH Park, J Park, E Park, SG Kim, HY Yu Advanced Electronic Materials 7 (1), 2000410, 2021 | 16 | 2021 |
| Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor DG Jin, SH Kim, SG Kim, J Park, E Park, HY Yu Small 17 (30), 2100242, 2021 | 15 | 2021 |
| Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System J Park, E Park, SG Kim, DG Jin, HY Yu ACS Applied Electronic Materials 3 (12), 5584-5591, 2021 | 11 | 2021 |
| Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor J Park, E Park, HY Yu Applied Surface Science 603, 154307, 2022 | 10 | 2022 |
| Enhancement of DRAM performance by adopting metal–interlayer–semiconductor source/drain contact structure on DRAM cell M Son, SG Jung, SH Kim, E Park, SH Lee, HY Yu IEEE Transactions on Electron Devices 68 (5), 2275-2280, 2021 | 7 | 2021 |
| Ultralow Schottky barrier height achieved by using molybdenum disulfide/dielectric stack for source/drain contact SH Kim, KH Han, E Park, SG Kim, HY Yu ACS applied materials & interfaces 11 (37), 34084-34090, 2019 | 7 | 2019 |
| Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses DG Jin, SG Kim, H Jeon, EJ Park, SH Kim, JY Kim, HY Yu Materials Today Nano 22, 100320, 2023 | 4 | 2023 |
| Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics SG Jung, D Jang, SJ Min, E Park, HY Yu IEEE Access 10, 41112-41118, 2022 | 4 | 2022 |
| Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer MS Kim, E Park, SG Kim, JH Park, SH Kim, KH Han, HY Yu Advanced Materials Interfaces 10 (7), 2202296, 2023 | 2 | 2023 |
| LER-induced random variation–immune effect of metal-interlayer–semiconductor source/drain structure on N-type Ge Junctionless FinFETs SG Jung, E Park, C Shin, HY Yu IEEE Transactions on Electron Devices 68 (3), 1340-1345, 2021 | 2 | 2021 |
| Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process after Silicidation of TiSi2 through Ta Interlayer for diffusion barrier MS Kim, SH Hwang, SH Kim, JH Kim, E Park, KH Han, HY Yu IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Schottky barrier engineering with a metal nitride–double interlayer–semiconductor contact structure to achieve high thermal stability and ultralow contact resistivity E Park, SH Kim, HY Yu Applied Surface Science 531, 147329, 2020 | 1 | 2020 |
| Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor SH Hwang, SH Kim, SG Kim, MS Kim, KH Han, S Song, JH Kim, E Park, ... Materials Today Advances 18, 100367, 2023 | | 2023 |
| Effect of Graphene oxide Interlayer on Schottky Barrier Height Reduction of Metal/n-Ge contact E Park, S Song, SH Kim, HY Yu 대한전기학회 학술대회 논문집, 246-247, 2021 | | 2021 |
| Highly Reliable Resistive Switching via PtSe2 Insertion Layer for Electrochemical metallization Threshold Switch E Park, M Kim, HY Yu 대한전기학회 학술대회 논문집, 244-245, 2021 | | 2021 |
| p-type Si Source/Drain Contact Resistivity Reduction Technique through Schottky Barrier Height Modulation with Ultrathin Al₂O₃ interlayer JH Kim, EJ Park, HY Yu 대한전기학회 학술대회 논문집, 1459-1460, 2021 | | 2021 |
| Metal-Double Interlayer-Semiconductor Contact Structure for Contact Resistivity Reduction and Thermal Stability for the Application to Monolithic 3D Integration E Park, HY Yu 대한전기학회 학술대회 논문집, 1410-1411, 2019 | | 2019 |
Seunghwan KimKorea Institute of Science and TechnologyVerified email at kist.re.kr
